N Channel SGT MOSFET Transistor Leiditech IAUC26N10S5L245 Suitable for Inverters and Power Supplies

Name: N Channel SGT MOSFET Transistor Leiditech IAUC26N10S5L245 Suitable for Inverters and Power Supplies
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: IAUC26N10S5L245
Availability: InStock

Key Attributes

Model Number: IAUC26N10S5L245

Product Custom Attributes

Drain To Source Voltage:

100V

Current - Continuous Drain(Id):

40A

RDS(on):

26mΩ@4.5V

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

2.5V@250uA

Reverse Transfer Capacitance (Crss@Vds):

4.1pF

Number:

1 N-channel

Output Capacitance(Coss):

194.6pF

Input Capacitance(Ciss):

1.1906nF

Pd - Power Dissipation:

72W

Gate Charge(Qg):

19.8nC@10V

Mfr. Part #:

IAUC26N10S5L245

Package:

DFN-8(5x6)

Product Description

Product Overview

This N-Channel Enhancement Mode Field Effect Transistor utilizes advanced SGT MOSFET technology to deliver low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics. It is specifically designed for enhanced ruggedness and suitability in applications requiring superior stability and uniformity. Key benefits include extremely low switching loss and an excellent Figure of Merit (FOM). It is ideal for use in inverters, consumer electronic power supplies, motor control, and synchronous-rectification applications, including isolated DC synchronous-rectification.

Product Attributes

Brand: Leiditech
Technology: SGT MOSFET
Channel Type: N-Channel
Mode: Enhancement Mode
Package Type: DFN5*6-8L

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Drain source voltage	VDS	Tj=25 unless otherwise noted			100	V
Gate source voltage	VGS	Tj=25 unless otherwise noted			±20	V
Continuous drain current¹⁾	ID	TC=25			40	A
Pulsed drain current²⁾	ID, pulse	TC=25			120	A
Power dissipation³⁾	PD	TC=25			72	W
Single pulsed avalanche energy⁵⁾	EAS				30	mJ
Operation and storage temperature	TstgTj		-55		150
Thermal resistance, junction-case	RJC				1.74	/W
Thermal resistance, junction-ambient⁴⁾	RJA				62	/W
Electrical Characteristics
Drain-source breakdown voltage	BVDSS	VGS=0 V, ID=250 µA	100			V
Gate threshold voltage	VGS(th)	VDS=VGS, ID=250 µA	1.0	2.5		V
Drain-source on-state resistance	RDS(ON)	VGS=10 V, ID=8 A		16	20	mΩ
Drain-source on-state resistance	RDS(ON)	VGS=4.5 V, ID=6 A		26		mΩ
Gate-source leakage current	IGSS	VGS=20 V			±100	nA
Drain-source leakage current	IDSS	VDS=100 V, VGS=0 V			1	µA
Input capacitance	Ciss	VGS=0 V, VDS=50 V, =1 MHz		1190.6		pF
Output capacitance	Coss	VGS=0 V, VDS=50 V, =1 MHz		194.6		pF
Reverse transfer capacitance	Crss	VGS=0 V, VDS=50 V, =1 MHz		4.1		pF
Turn-on delay time	td(on)	VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=10 A		17.8		ns
Rise time	tr	VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=10 A		3.9		ns
Turn-off delay time	td(off)	VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=10 A		33.5		ns
Fall time	tf	VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=10 A		3.2		ns
Total gate charge	Qg	ID=8 A, VDS=50 V, VGS=10 V		19.8		nC
Gate-source charge	Qgs	ID=8 A, VDS=50 V, VGS=10 V		2.4		nC
Gate-drain charge	Qgd	ID=8 A, VDS=50 V, VGS=10 V		5.3		nC
Gate plateau voltage	Vplateau	ID=8 A, VDS=50 V, VGS=10 V		3.2		V
Diode forward current	IS	VGS<Vth			40	A
Pulsed source current	ISP				120	A
Diode forward voltage	VSD	IS=8 A, VGS=0 V			1.3	V
Reverse recovery time	trr	IS=8 A, di/dt=100 A/µs		50.2		ns
Reverse recovery charge	Qrr	IS=8 A, di/dt=100 A/µs		95.1		nC
Peak reverse recovery current	Irrm	IS=8 A, di/dt=100 A/µs			2.5	A
*Package Mechanical Data-DFN56-8L-JQ**
Symbol	Common	mm	Inch	Min	Max	Min	Max
A		1.03	1.17	0.0406	0.0461
b		0.34	0.48	0.0134	0.0189
c		0.824	0.0970	0.0324	0.082
D		4.80	5.40	0.1890	0.2126
D1		4.11	4.31	0.1618	0.1697
D2		4.80	5.00	0.1890	0.1969
E		5.95	6.15	0.2343	0.2421
E1		5.65	5.85	0.2224	0.2303
E2		1.60		0.0630
e	BSC	1.27		0.05
L		0.05	0.25	0.0020	0.0098
L1		0.38	0.50	0.0150	0.0197
L2		0.38	0.50	0.0150	0.0197
H		3.30	3.50	0.1299	0.1378
I			0.18		0.0070

Product ID: IAUC26N10S5L245

Pack Marking: IAUC26N10S5L245

Ordering Information:

Product ID	Pack Marking	Qty(PCS)
IAUC26N10S5L245	IAUC26N10S5L245	5000

Notes:

¹⁾ Calculated continuous current based on maximum allowable junction temperature.
²⁾ Repetitive rating; pulse width limited by max. junction temperature.
³⁾ Pd is based on max. junction temperature, using junction-case thermal resistance.
⁴⁾ The value of RJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 .
⁵⁾ VDD=50 V, RG=25 , L=0.3 mH, starting Tj=25 .

Contact Information:

Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059

Website: www.leiditech.com

Revision: Rev 2.0, 12.01.2019

2409292333_Leiditech-IAUC26N10S5L245_C3647068.pdf

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