Silicon Carbide Power MOSFET LGE LGE3M70120J Suitable for EV Chargers and Motor Drives Applications
Key Attributes
Model Number:
LGE3M70120J
Product Custom Attributes
Mfr. Part #:
LGE3M70120J
Package:
TO-263-7
Product Description
LGE3M70120J Silicon Carbide Power MOSFET
The LGE3M70120J is a high-performance Silicon Carbide Power MOSFET designed for demanding applications requiring high blocking voltage and efficient operation. It offers low on-resistance and a fast intrinsic diode with low reverse recovery, making it suitable for motor drives, inverters, EV charging stations, AC/DC and DC/DC converters, and uninterruptible power supplies. Its benefits include higher system efficiency, convenience for parallel device configurations without thermal runaway, suitability for high-temperature applications, enhanced reliability in hard switching scenarios, and ease of driving.
Product Attributes
- Brand: LGE
- Material: Silicon Carbide
- Certifications: AEC-Q101 and PPAP capable
- Package: TO-263-7
- Marking: LGE3M70120J
- ESD Sensitivity: Yes
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 100A | 1200 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 5mA | 1.8 | 2.6 | 3.6 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 1200V, VGS = 0V | 1 | 50 | A | |
| Gate-Source Leakage Current | IGSS | VGS = 20V, VDS = 0V | 1 | 200 | nA | |
| VGS = -5V, VDS = 0V | -200 | -1 | 0 | nA | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 20V, ID = 20 A | 68 | 85 | m | |
| VGS = 20V, ID = 20 A, TJ = 150C | 108 | |||||
| VGS = 20V, ID = 20 A, TJ = 175C | 122 | |||||
| Diode Forward Voltage | VSD | VGS = -5V, ISD = 10A | 4.4 | V | ||
| VGS = -5V, ISD = 10A, TJ = 150C | 4.0 | |||||
| VGS = -5V, ISD = 10A, TJ = 175C | 3.9 | |||||
| Continuous Diode Forward Current | IS | VGS = -5V | 31 | A | ||
| Reverse Recovery time | trr | VGS = -5V, ISD = 20A, VR= 800V, dif/dt = 3100 A/s | 22 | ns | ||
| Reverse Recovery Charge | Qrr | 160 | nC | |||
| Peak Reverse Recovery Current | Irrm | 17 | A | |||
| Thermal resistance from junction to case | Rth(j-c) | 0.64 | 0.78 | 0C/W |
2410301412_LGE-LGE3M70120J_C42372310.pdf
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