SOT 23 Package MOSFET Leiditech Si2323CDS Featuring Low RDS ON and Suitable for Load Switching Applications
Key Attributes
Model Number:
Si2323CDS
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
RDS(on):
88mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Pd - Power Dissipation:
1.31W
Input Capacitance(Ciss):
1.2nF@15V
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
Si2323CDS
Package:
SOT-23
Product Description
Product Overview
The Si2323CDS is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for applications such as battery protection, load switching, and uninterruptible power supplies.
Product Attributes
- Brand: Leiditech
- Model: Si2323CDS
- Package: SOT-23
- Technology: Advanced Trench
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -4.9 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -3.9 | A | |||
| IDM | Pulsed Drain Current2 | -14 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.31 | W | |||
| PD@TA=70 | Total Power Dissipation3 | 0.84 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient1 | 120 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t 10s) | 95 | /W | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.014 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-4.9A | 32 | 38 | m | |
| VGS=-2.5V , ID=-3.4A | 45 | 55 | m | |||
| VGS=-1.8V , ID=-2A | 65 | 85 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.4 | -1.0 | V | |
| VGS(th) | VGS(th) Temperature Coefficient | 3.95 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-16V , VGS=0V , TJ=55 | -5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 12.8 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-3A | 10.2 | 14.3 | nC | |
| Qgs | Gate-Source Charge | 1.89 | 2.6 | nC | ||
| Qgd | Gate-Drain Charge | 3.1 | 4.3 | nC | ||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3 , ID=-3A | 5.6 | 11.2 | ns | |
| Tr | Rise Time | 40.8 | 73 | ns | ||
| Td(off) | Turn-Off Delay Time | 33.6 | 67 | ns | ||
| Tf | Fall Time | 18 | 36 | ns | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 857 | 1200 | pF | |
| Coss | Output Capacitance | 114 | 160 | pF | ||
| Crss | Reverse Transfer Capacitance | 108 | 151 | pF | ||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -4.9 | A | ||
| ISM | Pulsed Source Current2,4 | -14 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| trr | Reverse Recovery Time | IF=-3A , di/dt=100A/s , TJ=25 | 21.8 | nS | ||
| Qrr | Reverse Recovery Charge | 6.9 | nC | |||
| Package Mechanical Data-SOT-23 | ||||||
| Symbol | Dimensions in Millimeters | |||||
| MIN. | MAX. | |||||
| A | 0.900 | 1.150 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.900 | 1.050 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.080 | 0.150 | ||||
| D | 2.800 | 3.000 | ||||
| E | 1.200 | 1.400 | ||||
| E1 | 2.250 | 2.550 | ||||
| e | 0.950 TYP | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.550 REF | |||||
| L1 | 0.300 | 0.500 | ||||
| 0 | 8 | |||||
Notes:
- 1. Data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
- 3. Power dissipation is limited by 150 junction temperature.
- 4. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
Marking and Ordering Information:
| Device Marking | Device | Package | Reel Size | Tape width | Quantity |
|---|---|---|---|---|---|
| A5SHB | Si2323CDS | SOT-23 | 180mm | 8 mm | 3000 units |
Contact Information:
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
2409292333_Leiditech-Si2323CDS_C3647041.pdf
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