Electronic Component LRC LMBT6427LT1G Silicon Darlington Transistor in SOT23 Package for Various Uses
Key Attributes
Model Number:
LMBT6427LT1G
Product Custom Attributes
Mfr. Part #:
LMBT6427LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT6427LT1G and S-LMBT6427LT1G are NPN Silicon Darlington Transistors from LESHAN RADIO COMPANY, LTD. Designed for various electronic applications, these transistors offer high current gain and are available in the SOT-23 (TO-236AB) package. The S- prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package: SOT23 (TO236AB)
- Material: Silicon
- Certifications: AEC-Q101 Qualified (S- prefix models)
- RoHS Compliance: Declared
Technical Specifications
| Characteristic | Symbol | Value | Unit | Conditions |
| Maximum Ratings | V CEO | 40 | Vdc | |
| V CBO | 40 | Vdc | ||
| V EBO | 12 | Vdc | ||
| I C (Continuous) | 500 | mAdc | ||
| Thermal Characteristics (FR5 Board) | PD | 225 | mW | TA = 25C |
| RJA | 556 | C/W | ||
| Thermal Characteristics (Alumina Substrate) | PD | 300 | mW | TA = 25C |
| RJA | 417 | C/W | ||
| Junction and Storage Temperature | TJ , Tstg | 55 to +150 | C | |
| Off Characteristics | V (BR)CEO | 40 | Vdc | I C = 10 mAdc, V BE = 0 |
| V (BR)CBO | 40 | Vdc | I C = 100 Adc, I E = 0 | |
| V (BR)EBO | 12 | Vdc | I E = 10 Adc, I C = 0 | |
| Cutoff Currents | I CES | 1.0 | Adc | V CE = 25Vdc, I B = 0 |
| I CBO | 50 | nAdc | V CB = 30Vdc, I E = 0 | |
| I EBO | 50 | nAdc | V EB = 10Vdc, I C= 0 | |
| DC Current Gain | hFE | 10,000 - 100,000 | I C = 10 mAdc, V CE = 5.0 Vdc | |
| hFE | 20,000 - 200,000 | I C = 100 mAdc, V CE = 5.0Vdc | ||
| hFE | 14,000 - 140,000 | I C = 500 mAdc, V CE = 5.0Vdc | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | 1.2 | Vdc | I C = 50 mAdc, I B = 0.5 mAdc |
| VCE(sat) | 1.5 | Vdc | I C = 500 mAdc, I B = 0.5 mAdc | |
| BaseEmitter Saturation Voltage | V BE(sat) | 2.0 | Vdc | I C = 500 mAdc, I B = 0.5 mAdc |
| BaseEmitter On Voltage | V BE(on) | 1.75 | Vdc | I C = 50 mAdc, V CE = 5.0Vdc |
| Capacitance | C obo | 7.0 | pF | V CB = 10 Vdc, I E = 0, f = 1.0 MHz |
| C ibo | 15 | pF | V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz | |
| Current GainHigh Frequency | |h fe | | 1.3 | V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz | |
| Noise Figure | NF | 10 | dB | V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 k, f = 1.0 kHz |
2412052036_LRC-LMBT6427LT1G_C171570.pdf
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