LRC S LMBT5401LT1G High Voltage Transistor Automotive Grade with Halogen Free Materials and AEC Q101
Key Attributes
Model Number:
S-LMBT5401LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LMBT5401LT1G
Package:
SOT-23
Product Description
Product Overview
High Voltage Transistor designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variants are AEC-Q101 qualified and PPAP capable. Compliant with RoHS requirements and Halogen Free materials.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Certifications: RoHS, Halogen Free, AEC-Q101 (S- prefix)
- Material Compliance: RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | LMBT5401LT1G | S-LMBT5401LT1G | Unit | Notes | |
| MAXIMUM RATINGS | ||||||
| Collector current Continuous | IC | 300 | 300 | mA | ||
| Collector-Emitter Voltage | VCEO | -150 | -150 | V | ||
| Collector-Base voltage | VCBO | -160 | -160 | V | ||
| Emitter-Base Voltage | VEBO | -5 | -5 | V | ||
| Total Device Dissipation, FR-5 Board @ TA = 25C | PD | 300 | 300 | mW | Note 1 | |
| Derate above 25C | 1.8 | 1.8 | mW/ | |||
| Thermal Resistance, JunctiontoAmbient | RJA | 417 | 417 | /W | Note 1 | |
| Total Device Dissipation, Alumina Substrate @ TA = 25C | PD | 225 | 225 | mW | Note 2 | |
| Derate above 25C | 1.8 | 1.8 | mW/ | |||
| Thermal Resistance, JunctiontoAmbient | RJA | 556 | 556 | /W | Note 2 | |
| Junction and Storage temperature | TJ,Tstg | -55+150 | -55+150 | |||
| OFF CHARACTERISTICS | ||||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -150 | -150 | V | (IC =-1.0mA,IB=0) | |
| Collector-Base Breakdown voltage | V(BR)CBO | -160 | -160 | V | (IC = -100A,IE=0) | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | -5 | V | (IE = -10A,IC=0) | |
| Collector Cutoff Current | ICBO | -50 | -50 | nA | (VCB = -120 V,IE=0) | |
| Collector Cutoff Current | ICBO | -50 | -50 | A | (VCB = -120 V,IE=0,TA=100) | |
| Collector-Emitter cutoff Current | ICEO | -10 | -10 | A | (VCE-150V, IB=0) | |
| Emitter-Base cut-off current | IEBO | -50 | -50 | nA | (IC = 0, VEB=-5.0V) | |
| ON CHARACTERISTICS | ||||||
| DC Current Gain | HFE | 40-240 | 40-240 | (IC = 1.0mA, VCE = 5.0 V) | ||
| DC Current Gain | HFE | 50-300 | 50-300 | (IC = 10 mA, VCE = 5.0 V) | ||
| DC Current Gain | HFE | 50-200 | 50-200 | (IC = 50 mA, VCE = 5.0 V) | ||
| Collector-Emitter Saturation Voltage | VCE(S) | -0.2 | -0.2 | V | (IC = 10 mA, IB = 1.0 mA) | |
| Collector-Emitter Saturation Voltage | VCE(S) | -0.5 | -0.5 | V | (IC = 50 mA, IB = 5.0 mA) | |
| BaseEmitter Saturation Voltage | VBE(S) | -1 | -1 | V | (IC = 10 mA, IB = 1.0 mA) | |
| BaseEmitter Saturation Voltage | VBE(S) | -1 | -1 | V | (IC = 50 mA, IB = 5.0 mA) | |
| SMALLSIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product | fT | 100 | 100 | MHz | (IC = 10 mA, VCE = 10 V, f = 100 MHz) | |
| Output Capacitance | Cobo | 6 | 6 | pF | (VCB = 10 V, IE = 0, f = 1.0 MHz) | |
| SmallSignal Current Gain | hfe | 300 | 300 | (IC = 1.0mA, VCE = 10V, f = 1.0 kHz) | ||
| Noise Figure | NF | 8 | 8 | dB | (IC =200 A,VCE= 5.0 V,Rs=10, f=1.0 kHz) | |
2410010201_LRC-S-LMBT5401LT1G_C5368881.pdf
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