VHF UHF NPN Silicon Transistor LRC LMBT918LT1G Suitable for High Frequency Electronic Applications
Key Attributes
Model Number:
LMBT918LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
600MHz
Type:
NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
15V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT918LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT918LT1G is a VHF/UHF NPN Silicon Transistor from LESHAN RADIO COMPANY, LTD., designed for various electronic applications requiring high-frequency performance. It offers reliable operation within specified voltage and current limits, making it suitable for amplifier and signal processing circuits.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Device Marking: M3B
- Package: SOT-23 (TO-236AB)
- RoHS Compliance: Declared
Technical Specifications
| Characteristic | Symbol | Min | Max | Unit | Conditions |
| MAXIMUM RATINGS | V CEO | 15 | Vdc | ||
| V CBO | 30 | Vdc | |||
| V EBO | 3.0 | Vdc | |||
| I C (Continuous) | 50 | mAdc | |||
| THERMAL CHARACTERISTICS (FR-5 Board) | PD | 225 | mW | TA = 25C | |
| RJA | 556 | C/W | |||
| THERMAL CHARACTERISTICS (Alumina Substrate) | PD | 300 | mW | TA = 25C | |
| RJA | 417 | C/W | |||
| JUNCTION AND STORAGE TEMPERATURE | TJ , Tstg | 55 | +150 | C | |
| OFF CHARACTERISTICS | V (BR)CEO | 15 | Vdc | I C = 3.0 mAdc, I B = 0 | |
| V (BR)CBO | 30 | Vdc | I C = 1.0 Adc, I E = 0 | ||
| V (BR)EBO | 3.0 | Vdc | I E = 10 Adc, I C = 0 | ||
| COLLECTOR CUTOFF CURRENT | I CBO | 50 | nAdc | V CB = 15 Vdc, I E = 0 | |
| ON CHARACTERISTICS | hFE | 20 | I C = 3.0 mAdc, V CE = 1.0 Vdc | ||
| VCE(sat) | 0.4 | Vdc | I C = 10 mAdc, I B = 1.0 mAdc | ||
| V BE(sat) | 1.0 | Vdc | I C = 10 mAdc, I B = 1.0 mAdc | ||
| SMALL-SIGNAL CHARACTERISTICS | f T | 600 | MHz | I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz | |
| C obo | 3.0 | pF | V CB = 0 Vdc, I E = 0, f = 1.0 MHz | ||
| C obo | 1.7 | pF | V CB = 10 Vdc, I E = 0, f = 1.0 MHz | ||
| INPUT CAPACITANCE | C ibo | 2.0 | pF | V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz | |
| NOISE FIGURE | NF | 6.0 | dB | I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 , f = 60 MHz | |
| POWER OUTPUT | P out | 30 | mW | I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz | |
| COMMON-EMITTER AMPLIFIER POWER GAIN | G pe | 11 | dB | I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz |
2212131909_LRC-LMBT918LT1G_C5273114.pdf
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