Dual general purpose transistor LRC LBC857BDW1T1G in SOT363 SC88 package optimized for surface mount
Key Attributes
Model Number:
LBC857BDW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC857BDW1T1G
Package:
SOT-363(SC-88)
Product Description
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors
These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 package, which is designed for low power surface mount applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package: SOT363/SC88
- RoHS Compliance: Declared
Technical Specifications
| Device Marking | Model | VCEO (V) | VCBO (V) | VEBO (V) | IC (mAdc) | PD (mW) | RJA (C/W) | TJ, Tstg (C) | V(BR)CEO (V) | V(BR)CES (V) | V(BR)CBO (V) | V(BR)EBO (V) | ICBO (nA/A) | hFE | VCE(sat) (V) | VBE(sat) (V) | VBE(on) (V) | fT (MHz) | Cob (pF) | NF (dB) |
| 3B | LBC856BDW1T1G | -65 | -80 | -5.0 | -100 | 380 | 328 | -55 to +150 | -65 | -80 | -80 | -5.0 | -15 | 220-420 (IC=-2mA) | -0.3 (IC=-10mA) | -0.7 (IC=-10mA) | -0.6 (IC=-2mA) | 100 | 4.5 | 10 |
| 3F | LBC857BDW1T1G | -45 | -50 | -5.0 | -100 | 380 | 328 | -55 to +150 | -45 | -50 | -50 | -5.0 | -15 | 220-420 (IC=-2mA) | -0.3 (IC=-10mA) | -0.7 (IC=-10mA) | -0.6 (IC=-2mA) | 100 | 4.5 | 10 |
| 3G | LBC857CDW1T1G | -45 | -50 | -5.0 | -100 | 380 | 328 | -55 to +150 | -45 | -50 | -50 | -5.0 | -15 | 290-520 (IC=-2mA) | -0.3 (IC=-10mA) | -0.7 (IC=-10mA) | -0.6 (IC=-2mA) | 100 | 4.5 | 10 |
| 3K | LBC858BDW1T1G | -30 | -30 | -5.0 | -100 | 380 | 328 | -55 to +150 | -30 | -30 | -30 | -5.0 | -4.0 | 220-420 (IC=-2mA) | -0.3 (IC=-10mA) | -0.7 (IC=-10mA) | -0.6 (IC=-2mA) | 100 | 4.5 | 10 |
| 3L | LBC858CDW1T1G | -30 | -30 | -5.0 | -100 | 380 | 328 | -55 to +150 | -30 | -30 | -30 | -5.0 | -4.0 | 290-520 (IC=-2mA) | -0.3 (IC=-10mA) | -0.7 (IC=-10mA) | -0.6 (IC=-2mA) | 100 | 4.5 | 10 |
| 3A | LBC856ADW1T1G | -65 | -80 | -5.0 | -100 | 380 | 328 | -55 to +150 | -65 | -80 | -80 | -5.0 | -15 | 125-180 (IC=-2mA) | -0.3 (IC=-10mA) | -0.7 (IC=-10mA) | -0.6 (IC=-2mA) | 100 | 4.5 | 10 |
2410010130_LRC-LBC857BDW1T1G_C383198.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
