Silicon NPN transistor LRC L2SC4617RT1G ideal for electronic switching and signal amplification tasks

Key Attributes
Model Number: L2SC4617RT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
180MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L2SC4617RT1G
Package:
SC-89
Product Description

Product Overview

The L2SC4617 is a general-purpose NPN silicon transistor designed for various electronic applications. It offers reliable performance with key electrical characteristics suitable for signal amplification and switching.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Compliance: RoHS
  • Automotive Qualification: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)

Technical Specifications

ModelVCBO (V)VCEO (V)VEBO (V)IC (A)PC (W)hFE (Min)hFE (Typ)hFE (Max)VCE(sat) (V)fT (MHz)Cob (pF)Conditions
L2SC4617QT1G605070.150.15120-270---IC=1mA, VCE=6V
L2SC4617RT1G605070.150.15180-390---IC=1mA, VCE=6V
L2SC4617ST1G605070.150.15270-560---IC=1mA, VCE=6V
S-L2SC4617QT1G605070.150.15120-270---IC=1mA, VCE=6V
S-L2SC4617RT1G605070.150.15180-390---IC=1mA, VCE=6V
S-L2SC4617ST1G605070.150.15270-560---IC=1mA, VCE=6V
All Models605070.150.15---2.0300.5VCE(sat): IC/IB=50mA/5mA; fT: IE=2mA, f=30MHz; Cob: VCB=12V, IE=0A, f=1MHz

2412052036_LRC-L2SC4617RT1G_C383172.pdf

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