High surge current Littelfuse S6X8TS1RP SCR suitable for microprocessor interface and gas ignition systems
Key Attributes
Model Number:
S6X8TS1RP
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
5uA
Voltage - On State(Vtm):
1.7V
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
600V
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
S6X8TS1RP
Package:
SOT-223
Product Description
Product Overview
The SxX8xSx EV series sensitive SCRs are designed for high static dv/dt and low turn-off time (tq), making them ideal for Ground Fault Circuit Interrupter (GFCI) and Gas Ignition applications. These SCRs feature glass-passivated junctions for long-term reliability and parametric stability, a sensitive gate for direct microprocessor interface, and surge capability up to 10 A. They are available in through-hole and surface-mount packages and are RoHS compliant and Halogen-Free.
Product Attributes
- Brand: Littelfuse
- Series: SxX8xSx EV Series
- Certifications: RoHS compliant, Halogen-Free
Technical Specifications
| Characteristic | Value | Unit | Conditions | Notes |
| RMS On-state Current (IT(RMS)) | 0.8 | A | TO-92 TC = 55 C; SOT-89 TC = 60 C; SOT-223 TL = 60 C | |
| Average On-state Current (IT(AV)) | 0.51 | A | TO-92 TC = 55 C; SOT-89 TC = 60 C; SOT-223 TL = 60 C | |
| Non-repetitive Surge Peak On-state Current (ITSM) | 8 to 10 | A | Single Cycle, TJ,Initial = 25 C, f = 50/60 Hz | |
| I2t Value for Fusing | 0.32 to 0.41 | As | tp = 10 ms / 8.3 ms, f = 50/60 Hz | |
| Critical Rate of Rise of On-state Current (di/dt) | 50 | A/s | IG =10 mA, TJ = 125 C | |
| Peak Gate Current (IGM) | 1.0 | A | tp = 10 s, TJ = 125 C | |
| Average Gate Power Dissipation (PG(AV)) | 0.1 | W | TJ = 125 C | |
| Storage Junction Temperature Range (TSTG) | -40 to 150 | C | ||
| Operating Junction Temperature Range (TJ) | -40 to 125 | C | ||
| Thermal Resistance, Junction-to-Case (Rth(JC)) | 30 to 75 | C/W | AC, IT = 0.8 A(RMS) | TO-92: 75; SOT-223: 30; SOT-89: 50 |
| Thermal Resistance, Junction-to-Ambient (Rth(JA)) | 60 to 150 | C/W | IT = 0.8 A(RMS) | TO-92: 150; SOT-223: 60; SOT-89: 90 |
| DC Gate Trigger Current (IGT) | 0.5 to 200 | A | VD = 6 V, RL = 10 | SxX8yS1: 1 to 50; SxX8yS2: 15 to 200 |
| DC Gate Trigger Voltage (VGT) | 0.8 | V | VD = 6 V, RL = 10 | Min Typ Max for all models |
| Peak Reverse Gate Voltage (VGRM) | 5 | V | IRG = 10 A | |
| Holding Current (IH) | 5 | mA | RGK , Initial current = 20 A | |
| Critical Rate-of-rise of Off-stage Voltage ((dv/dt)s) | 75 | V/s | TJ = 125 C, VD =VDRM/VRRM, RGK | |
| Turn-off Time (tq) | 25 to 30 | s | TJ = 25 C @ 600 V, RGK | SxX8yS1: 30; SxX8yS2: 25 |
| Turn-on Time (tgt) | 2 | s | IG = 10 mA, PW T = 1.6 APK | |
| Gate Non-trigger Voltage (VGD) | 0.2 | V | VD = VDRM, RGK = 1 J = 125 C | |
| Peak On-state Voltage (VTM) | 1.70 | V | ITM = 1.6 Apk | Max |
| Off-state Current, Peak Repetitive (IDRM) | 3 to 500 | A | TJ = 25 C @ VD = VDRM, RGK | TJ = 25 C: 3; TJ = 125 C: 500 |
2410311311_Littelfuse-S6X8TS1RP_C17695820.pdf
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