LGE G2305 P Channel MOSFET Offering Low On State Resistance and Gate Threshold Voltage for PWM Load Switch
Key Attributes
Model Number:
G2305
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
75mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
7.8nC@4.5V
Mfr. Part #:
G2305
Package:
SOT-23
Product Description
Product Overview
The 2305 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This P-Channel MOSFET is suitable for use as a load switch or in PWM applications, offering high power and current handling capability.
Product Attributes
- Brand: LG Semicon (implied by URL and email)
- Certifications: Lead free product is acquired
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -20 | -21 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V | - | - | -1 | A |
| Gate-Body Leakage Current | IGSS | VGS=8V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -0.45 | -0.7 | -1.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-4.1A | - | 45 | 52 | m |
| VGS=-2.5V, ID=-3A | - | 60 | 75 | m | ||
| Forward Transconductance | gFS | VDS=-5V,ID=-3.5A | - | 8.5 | - | S |
| Input Capacitance | Clss | - | 740 | - | PF | |
| Output Capacitance | Coss | - | 290 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=-4V,VGS=0V, F=1.0MHz | - | 190 | - | PF |
| Turn-on Delay Time | td(on) | - | 12 | - | nS | |
| Turn-on Rise Time | tr | - | 35 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 30 | - | nS | |
| Turn-Off Fall Time | tf | VDD=-4V,ID=-3.3A , RL=-1.2,VGEN=-4.5V,Rg=1 | - | 10 | - | nS |
| Total Gate Charge | Qg | - | 7.8 | - | nC | |
| Gate-Source Charge | Qgs | - | 1.2 | - | nC | |
| Gate-Drain Charge | Qgd | VDS=-4V,ID=-4.1A,VGS=-4.5V | - | 1.6 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=-1.6A | - | - | -1.2 | V |
| Diode Forward Current | IS | - | - | 1.6 | A | |
| Drain-Source Voltage | VDS | -20 | - | - | V | |
| Gate-Source Voltage | VGS | - | 8 | - | V | |
| Drain Current -Continuous | ID | - | -4.1 | - | A | |
| Drain Current -Pulsed | IDM | (Note 1) | - | -15 | - | A |
| Maximum Power Dissipation | PD | - | 1.7 | - | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 150 | ||
| Thermal Resistance,Junction-to-Ambient | RJA | (Note 2) | - | 74 | - | /W |
2410010131_LGE-G2305_C402251.pdf
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