Silicon NPN Transistor S LMBT3906LT1G AEC Q101 Certified RoHS Compliant Halogen Free Electronic Part
Key Attributes
Model Number:
S-LMBT3906LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
250MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LMBT3906LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT3906LT1G and S-LMBT3906LT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Silicon
- Certifications: RoHS, Halogen Free, AEC-Q101 (S-prefix)
- Device Marking: LMBT3906LT1G (2A), S-LMBT3906LT1G (2A)
Technical Specifications
| Parameter | Symbol | LMBT3906LT1G | S-LMBT3906LT1G | Unit | Notes | |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | VCEO | -40 | -40 | Vdc | ||
| CollectorBase Voltage | VCBO | -40 | -40 | Vdc | ||
| EmitterBase Voltage | VEBO | -5 | -5 | Vdc | ||
| Collector Current Continuous | IC | -200 | -200 | mAdc | ||
| Total Device Dissipation, FR5 Board | PD | 225 | 225 | mW | @ TA = 25C | |
| Derate above 25C | 1.8 | 1.8 | mW/C | |||
| Thermal Resistance, JunctiontoAmbient | RJA | 556 | 556 | C/W | ||
| Junction and Storage temperature | TJ,Tstg | -55+150 | -55+150 | C | ||
| OFF CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -40 | -40 | V | (IC = -1.0 mAdc, IB = 0) | |
| CollectorBase Breakdown Voltage | VBR(CBO) | -40 | -40 | V | (IC = -10 Adc, IE = 0) | |
| EmitterBase Breakdown Voltage | VBR(EBO) | -5 | -5 | V | (IE = -10 Adc, IC = 0) | |
| Collector Cutoff Current | ICEX | nA | ( VCE = -30 Vdc, VEB = -3.0Vdc) | |||
| Base Cutoff Current | IBL | nA | (VCE = -30 Vdc, VEB = -3.0Vdc) | |||
| ON CHARACTERISTICS | ||||||
| DC Current Gain | HFE | 60 - 300 | 60 - 300 | (IC = -0.1 mAdc, VCE = -1.0 Vdc) | ||
| 60 - 100 | 60 - 100 | (IC = -1.0 mAdc, VCE = -1.0 Vdc) | ||||
| 30 - 60 | 30 - 60 | (IC = -10 mAdc, VCE = -1.0 Vdc) | ||||
| (IC = -50 mAdc, VCE = -1.0 Vdc) | ||||||
| (IC = -100 mAdc, VCE = -1.0 Vdc) | ||||||
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.25 (Typ) | -0.25 (Typ) | V | (IC = -10 mAdc, IB = -1.0 mAdc) | |
| -0.4 (Typ) | -0.4 (Typ) | V | (IC = -50 mAdc, IB = -5.0 mAdc) | |||
| BaseEmitter Saturation Voltage | VBE(sat) | -0.65 (Typ) | -0.65 (Typ) | V | (IC = -10 mAdc, IB = -1.0 mAdc) | |
| -0.85 (Typ) | -0.85 (Typ) | V | (IC = -50 mAdc, IB = -5.0 mAdc) | |||
| SMALLSIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product | fT | 250 | 250 | MHz | (IC = -10mAdc, VCE= -20Vdc, f = 100MHz) | |
| Output Capacitance | Cobo | 4.5 (Typ) | 4.5 (Typ) | pF | (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) | |
| Input Capacitance | Cibo | 10 (Typ) | 10 (Typ) | pF | (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) | |
| SWITCHING CHARACTERISTICS | ||||||
| Delay Time | td | 35 (Typ) | 35 (Typ) | ns | (VCC = -3.0 Vdc,VBE=0.5Vdc, IC = -10mAdc, IB1 = -1.0 mAdc) | |
| Rise Time | tr | 35 (Typ) | 35 (Typ) | ns | (VCC = -3.0 Vdc,VBE=0.5Vdc, IC = -10mAdc, IB1 = -1.0 mAdc) | |
| Storage Time | ts | 225 (Typ) | 225 (Typ) | ns | (VCC = -3.0 Vdc, IC = -10 mAdc,IB1 = IB2 = -1.0 mAdc) | |
| Fall Time | tf | 75 (Typ) | 75 (Typ) | ns | (VCC = -3.0 Vdc, IC = -10 mAdc,IB1 = IB2 = -1.0 mAdc) | |
2211161830_LRC-S-LMBT3906LT1G_C383300.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
