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quality Integrated Bias Resistor Network Transistor LRC LDTD113ZLT1G for Driver and Interface Circuit Applications factory
quality Integrated Bias Resistor Network Transistor LRC LDTD113ZLT1G for Driver and Interface Circuit Applications factory

Integrated Bias Resistor Network Transistor LRC LDTD113ZLT1G for Driver and Interface Circuit Applications

Key Attributes
Model Number: LDTD113ZLT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
1.3kΩ
Resistor Ratio:
12
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LDTD113ZLT1G
Package:
SOT-23
Product Description

Product Overview

The LDTD113ZLT1G is a silicon NPN surface mount transistor featuring a monolithic bias resistor network. This integrated design eliminates the need for external input resistors, simplifying circuit configuration for inverter applications. The built-in thin-film resistors offer complete isolation and minimize parasitic effects, enabling straightforward on/off condition settings for easy device design. It is suitable for inverter, interface, and driver applications.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements
  • Device Marking: E8
  • Special Designation: S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Technical Specifications

Model Device Marking R1 (K) R2 (K) Shipping
LDTD113ZLT1G E8 1 10 3000/Tape & Reel
LDTD113ZLT1G E8 1 10 10000/Tape & Reel
LDTD113ZLT3G E8 1 10
S-LDTD113ZLT1G E8 1 10
S-LDTD113ZLT3G E8 1 10
Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage (off) VI(off) 1.5 V VCC=5V, IO=100A
Input voltage (on) VI(on) 0.7 V VO=0.3V, IO=20mA
Output voltage (on) VO(on) 0.3 V IO/II=50mA/2.5mA
Input current II 1 mA VI=5V
Output current IO 10 mA VCC=50V, VI=0V
DC current gain GI 0.7 82 VO=5V, IO=50mA
Input resistance R1 8 k VCE=10V, IE=50mA, f=100MHz
Resistance ratio R2/R1 10
Transition frequency fT 200 MHz
Characteristics of built-in transistor Symbol Min. Typ. Max. Unit Conditions
Supply voltage VCC 50 V
Input voltage VIN 5 +10 V
Output current IC 500 mA
Power dissipation PD 200 mW
Junction temperature Tj 150 C
Storage temperature Tstg 55 +150 C
Dimension Symbol Min Max Unit
A A 2.80 3.04 mm
B B 1.20 1.40 mm
C C 0.89 1.11 mm
D D 0.37 0.50 mm
G G 1.78 2.04 mm
H H 0.013 0.100 mm
J J 0.085 0.177 mm
K K 0.35 0.69 mm
L L 0.89 1.02 mm
S S 2.10 2.64 mm
V V 0.45 0.60 mm

1912111437_LRC-LDTD113ZLT1G_C417320.pdf

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