650 Volt 24 Amp N Channel Power MOSFET IXTP24N65X2 with Low RDS ON and Avalanche Rating TO 220 Package
Key Attributes
Model Number:
IXTP24N65X2
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
24A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
145mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
390W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
IXTP24N65X2
Package:
TO-220-3
Product Description
Product Overview
The IXTA24N65X2, IXTP24N65X2, and IXTH24N65X2 are N-Channel Enhancement Mode Avalanche Rated X2-Class Power MOSFETs designed for high-density power applications. They offer low RDS(ON) and low QG, making them suitable for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, robotics, and servo controls. Key advantages include high power density, ease of mounting, and space savings.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by patents and company name)
- Certifications: U.S. Patents listed (e.g., 4,835,592, 4,931,844)
Technical Specifications
| Model | VDSS (V) | ID25 (A) | RDS(on) (m) | Package | Features |
| IXTA24N65X2 | 650 | 24 | 145 | TO-263 | International Standard Packages, Low RDS(ON) and QG, Avalanche Rated, Low Package Inductance |
| IXTP24N65X2 | 650 | 24 | 145 | TO-220 | International Standard Packages, Low RDS(ON) and QG, Avalanche Rated, Low Package Inductance |
| IXTH24N65X2 | 650 | 24 | 145 | TO-247 | International Standard Packages, Low RDS(ON) and QG, Avalanche Rated, Low Package Inductance |
| Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | VGS = 0V, ID = 250A | 650 | V | ||
| VGS(th) | VDS = VGS, ID = 250A | 3.0 | 5.0 | V | |
| IGSS | VGS = 30V, VDS = 0V | 100 | nA | ||
| IDSS | VDS = VDSS, VGS = 0V | 5 | A | ||
| IDSS (TJ = 125C) | VDS = VDSS, VGS = 0V | 100 | A | ||
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | 145 | m | ||
| VDSS (Max Ratings) | TJ = 25C to 150C | 650 | V | ||
| VDGR (Max Ratings) | TJ = 25C to 150C, RGS = 1M | 650 | V | ||
| VGSS (Continuous) | 30 | V | |||
| VGSM (Transient) | 40 | V | |||
| IDM (TC = 25C) | Pulse Width Limited by TJM | 48 | A | ||
| IA (TC = 25C) | 12 | A | |||
| EAS (TC = 25C) | 600 | mJ | |||
| dv/dt | IS IDM, VDD VDSS, TJ 150C | 15 | V/ns | ||
| PD (TC = 25C) | 390 | W | |||
| TJ | -55 | +150 | C | ||
| TJM | 150 | C | |||
| Tstg | -55 | +150 | C | ||
| TL (Soldering) | 1.6 mm from Case for 10s | 260 | C | ||
| FC (Mounting Force TO-263) | 10..65 | N/lb | |||
| Md (Mounting Torque TO-220 & TO-247) | 1.13 | Nm/lb.in | |||
| Weight (TO-263) | 2.5 | g | |||
| Weight (TO-220) | 3.0 | g | |||
| Weight (TO-247) | 6.0 | g | |||
| IS (Source-Drain Diode) | VGS = 0V | 24 | A | ||
| ISM (Source-Drain Diode) | Repetitive, pulse Width Limited by TJM | 96 | A | ||
| VSD (Source-Drain Diode) | IF = IS, VGS = 0V, Note 1 | 1.4 | V | ||
| trr (Source-Drain Diode) | IF = 12A, -di/dt = 100A/s, VR = 100V | 390 | ns | ||
| QRM (Source-Drain Diode) | IF = 12A, -di/dt = 100A/s, VR = 100V | 3.3 | C | ||
| IRM (Source-Drain Diode) | IF = 12A, -di/dt = 100A/s, VR = 100V | 17 | A | ||
| gfs | VDS = 10V, ID = 0.5 ID25, Note 1 | 13 | 22 | S | |
| RGi | 1.1 | ||||
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 2060 | pF | ||
| Coss | VGS = 0V, VDS = 25V, f = 1MHz | 1470 | pF | ||
| Crss | VGS = 0V, VDS = 25V, f = 1MHz | 1.2 | pF | ||
| Co(er) | VGS = 0V, VDS = 0.8 VDSS, f = 1MHz | 83 | pF | ||
| Co(tr) | VGS = 0V, VDS = 0.8 VDSS, f = 1MHz | 336 | pF | ||
| td(on) (Resistive Switching Times) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 10 | 20 | ns | ||
| tr (Resistive Switching Times) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 10 | 25 | ns | ||
| td(off) (Resistive Switching Times) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 10 | 50 | ns | ||
| tf (Resistive Switching Times) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 10 | 19 | ns | ||
| Qg(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 36 | nC | ||
| Qgs | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 9 | nC | ||
| Qgd | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 13 | nC | ||
| RthJC | 0.32 | C/W | |||
| RthCS (TO-220) | 0.50 | C/W | |||
| RthCS (TO-247) | 0.21 | C/W |
2410121314_Littelfuse-IXTP24N65X2_C6280802.pdf
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