PNP Silicon Transistor LRC LDTB113ZLT1G Featuring Integrated Thin Film Resistors for Interface Circuit Operation
Key Attributes
Model Number:
LDTB113ZLT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
1kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LDTB113ZLT1G
Package:
SOT-23
Product Description
Product Overview
The LDTB113ZLT1G and S-LDTB113ZLT1G are PNP Silicon Surface Mount Transistors featuring a monolithic bias resistor network. These devices simplify circuit design by eliminating the need for external input resistors, making them ideal for inverter circuits. The integrated thin-film resistors offer complete isolation for positive input biasing and minimize parasitic effects. Designed for ease of operation, requiring only on/off condition settings, these transistors are suitable for inverter, interface, and driver applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Package Type: Surface Mount, SOT-23
- Certifications: RoHS compliant, AEC-Q101 Qualified and PPAP Capable (for S- prefix models)
- Shipping Options: 3000/Tape & Reel, 10000/Tape & Reel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25C) | ||||||
| Supply voltage | VCC | -50 | V | |||
| Input voltage | VIN | -10 to +5 | V | |||
| Output current | IC | -500 | mA | |||
| Power dissipation | PD | 200 | mW | |||
| Junction temperature | Tj | -55 to +150 | C | |||
| Storage temperature | Tstg | -55 to +150 | C | |||
| Electrical Characteristics (Ta=25C) | ||||||
| Input voltage (OFF) | VI(off) | VCC= -5V, IO= -100A | - | - | -3 | V |
| Input voltage (ON) | VI(on) | VO= -0.3V, IO= -20mA | - | - | -0.3 | V |
| Output voltage (ON) | VO(on) | IO/II= -50mA/-2.5mA | - | - | -0.3 | V |
| Input current | II | VI= -5V | - | - | -7.2 | A |
| Output current | IO | VCC= -50V, VI=0V | - | - | -0.5 | mA |
| Input resistance | R1 | VO= -5V, IO= -50mA | 0.7 | 1 | - | k |
| DC current gain | GI | VCE= -10V, IE=50mA, f=100MHz | 56 | - | ||
| Resistance ratio | R2/R1 | 10 | - | |||
| Transition frequency | fT | 200 | - | - | MHz | |
| Transition frequency of the device | * | - | - | - | ||
| Device Marking and Resistor Values | ||||||
| Device Marking | R1 (K) | R2 (K) | ||||
| K8 | 1 | 10 | ||||
| Models | ||||||
| Model | Device Marking | R1 (K) | R2 (K) | Shipping | ||
| LDTB113ZLT1G | K8 | 1 | 10 | 3000/Tape & Reel | ||
| S-LDTB113ZLT1G | K8 | 1 | 10 | 10000/Tape & Reel | ||
| S-LDTB113ZLT3G | K8 | 1 | 10 | 10000/Tape & Reel | ||
2212131909_LRC-LDTB113ZLT1G_C5273231.pdf
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