IXTH102N15T Power MOSFET N Channel Trench Gate Avalanche Rated Device for Switching in TO 247 Package
Key Attributes
Model Number:
IXTH102N15T
Product Custom Attributes
Drain To Source Voltage:
150V
Configuration:
-
Current - Continuous Drain(Id):
102A
Operating Temperature -:
-55℃~+175℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
685pF@10V
Pd - Power Dissipation:
455W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
IXTH102N15T
Package:
TO-247
Product Description
Product Overview
The IXTA102N15T, IXTH102N15T, IXTP102N15T, and IXTQ102N15T are Trench Gate Power MOSFETs designed for high-speed power switching applications. These N-Channel Enhancement Mode devices are avalanche rated and offer features such as international standard packages, easy mounting, space savings, and high power density. They are suitable for a wide range of applications including DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor drives, and uninterruptible power supplies.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by patents and copyright)
- Certifications: Covered by multiple U.S. patents.
Technical Specifications
| Model | VDSS (V) | ID25 (A) | RDS(on) (m) | Package | Features |
| IXTA102N15T | 150 | 102 | 18 | TO-263 | International Standard Packages, Avalanche Rated |
| IXTH102N15T | 150 | 102 | 18 | TO-247 | International Standard Packages, Avalanche Rated |
| IXTP102N15T | 150 | 102 | 18 | TO-220 | International Standard Packages, Avalanche Rated |
| IXTQ102N15T | 150 | 102 | 18 | TO-3P | International Standard Packages, Avalanche Rated |
Maximum Ratings
| Symbol | Test Conditions | Maximum Ratings |
| VDSS | TJ = 25C to 175C | 150 V |
| VDGR | TJ = 25C to 175C, RGS = 1M | 150 V |
| VGSS Continuous | 20 V | |
| VGSS Transient | 30 V | |
| ID25 | TC = 25C | 102 A |
| ILRMS Lead Current Limit, RMS | 75 A | |
| IDM | TC = 25C, Pulse Width Limited by TJM | 300 A |
| IA | TC = 25C | 51 A |
| EAS | TC = 25C | 750 mJ |
| dV/dt | IS IDM, VDD VDSS , TJ 175C | 10 V/ns |
| PD | TC = 25C | 455 W |
| TJ | -55 ... +175 C | |
| TJM | 175 C | |
| Tstg | -55 ... +175 C | |
| TL | 1.6mm (0.062 in.) from Case for 10s | 300 C |
| TSOLD | Plastic Body for 10 seconds | 260 C |
| Md Mounting Torque | (TO-220, TO-3P, TO-247) | 1.13 Nm / 10 lbin. |
| FC Mounting Force | (TO-263) | 10..65 N / 2.2..14.6 lb. |
| Weight | TO-263 | 2.5 g |
| Weight | TO-220 | 3.0 g |
| Weight | TO-3P | 5.5 g |
| Weight | TO-247 | 6.0 g |
Characteristic Values
| Symbol | Test Conditions | Min. | Typ. | Max. |
| BVDSS | VGS = 0V, ID = 250A | 150 V | ||
| VGS(th) | VDS = VGS, ID = 1mA | 2.5 | 5.0 V | |
| IGSS | VGS = 20V, VDS = 0V | 200 nA | ||
| IDSS | VDS = VDSS, VGS= 0V | 5 A | ||
| IDSS | TJ = 150C | 250 A | ||
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | 18 m | ||
| gfs | VDS= 10V, ID = 0.5 ID25, Note 1 | 50 | 80 | S |
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 5220 | pF | |
| Coss | VGS = 0V, VDS = 25V, f = 1MHz | 685 | pF | |
| Crss | VGS = 0V, VDS = 25V, f = 1MHz | 95 | pF | |
| td(on) | Resistive Switching Times, VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 3.3 | 20 | ns | |
| tr | Resistive Switching Times, VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 3.3 | 14 | ns | |
| td(off) | Resistive Switching Times, VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 3.3 | 25 | ns | |
| tf | Resistive Switching Times, VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 3.3 | 22 | ns | |
| Qg(on) | VGS= 10V, VDS = 0.5 VDSS , ID = 25A | 87 | nC | |
| Qgs | VGS= 10V, VDS = 0.5 VDSS , ID = 25A | 23 | nC | |
| Qgd | VGS= 10V, VDS = 0.5 VDSS , ID = 25A | 31 | nC | |
| RthJC | 0.33 | C/W | ||
| RthCH | (TO-220) | 0.50 | C/W | |
| RthCH | (TO-3P & TO-247) | 0.25 | C/W |
Source-Drain Diode
| Symbol | Test Conditions | Min. | Typ. | Max. |
| IS | VGS = 0V | 102 A | ||
| ISM | Repetitive, Pulse Width Limited by TJM | 400 A | ||
| VSD | IF = 100A, VGS = 0V, Note 1 | 1.3 V | ||
| trr | IF = 51A, -di/dt = 100A/s, VR = 75V, VGS = 0V | 97 | ns | |
| IRM | IF = 51A, -di/dt = 100A/s, VR = 75V, VGS = 0V | 8.4 | A | |
| QRM | IF = 51A, -di/dt = 100A/s, VR = 75V, VGS = 0V | 409 | nC |
Note 1: Pulse test, t 300s; duty cycle, d 2%.
2411011305_Littelfuse-IXTH102N15T_C6884425.pdf
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