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quality N Channel Silicon Carbide MOSFET 1700 Volt 750 Milliohm Littelfuse LSIC1MO170E0750 for Power Control factory
quality N Channel Silicon Carbide MOSFET 1700 Volt 750 Milliohm Littelfuse LSIC1MO170E0750 for Power Control factory

N Channel Silicon Carbide MOSFET 1700 Volt 750 Milliohm Littelfuse LSIC1MO170E0750 for Power Control

Key Attributes
Model Number: LSIC1MO170E0750
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
6.2A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1Ω
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.7pF
Output Capacitance(Coss):
11.5pF
Input Capacitance(Ciss):
200pF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
13nC
Mfr. Part #:
LSIC1MO170E0750
Package:
TO-247AD
Product Description

Product Overview

The LSIC1MO170E0750 is a 1700 V, 750 mOhm N-Channel Silicon Carbide MOSFET optimized for high-frequency, high-efficiency applications. It features extremely low gate charge and output capacitance, low gate resistance for high-frequency switching, and normally-off operation at all temperatures. Its ultra-low on-resistance makes it suitable for demanding applications.

Product Attributes

  • Brand: Littelfuse
  • Material: Silicon Carbide (SiC)
  • Type: N-Channel MOSFET
  • Agency Approvals: (Refer to Datasheet for details)

Technical Specifications

Characteristic Symbol Conditions Value Unit
Drain-Source Voltage VDS VGS = 0 V 1700 V
Typical RDS(ON) RDS(ON) ID = 2 A, VGS = 20 V 750 mOhm
Continuous Drain Current ID VGS = 20 V, TC = 25 C 6.2 A
Continuous Drain Current ID VGS = 20 V, TC = 100 C 4.4 A
Pulsed Drain Current ID(pulse) TC = 25 C 11 A
Power Dissipation PD TC = 25 C, TJ = 175 C 60 W
Gate-Source Voltage (Absolute maximum) VGS,MAX Steady state 6 to +22 V
Gate-Source Voltage (Recommended DC operating) VGS,OP 5 to +20 V
Operating Junction Temperature TJ -55 to +175 C
Storage Temperature TSTG -55 to +150 C
Typical Thermal Resistance, junction-to-case Rth,JC,MAX 2.5 C/W
Maximum Thermal Resistance, junction-to-ambient Rth,JA,MAX 40 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 A 1700 V
Zero Gate Voltage Drain Current IDSS VDS = 1700, VGS = 0 V 0.05 A
Gate Leakage Current IGSS,F VGS = 22 V, VDS = 0 V - 100 nA
Drain-Source On-State Resistance RDS(ON) ID = 2 A, VGS = 20 V, TJ = 175 C 1550
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 1 mA 2.8 V
Gate Resistance RG Resonance method, Drain-Source shorted 29 Ohm
Input Capacitance CISS VDD = 1000 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV 200 pF
Output Capacitance COSS 11.5 pF
Reverse Transfer Capacitance CRSS 1.7 pF
Total Gate Charge Qg VDD = 1200 V, ID = 2 A, VGS = -5 / +20 V 13 nC
Turn-On Delay Time td(on) VDD = 1200 V, VGS = -5 / +20 V, ID = 2 A, RG,ext RL = 600 8 ns
Rise Time tr 12 ns
Turn-Off Delay Time td(off) 23 ns
Fall Time tf 74 ns
Diode Forward Voltage VSD IS = 1 A, VGS = 0 V 3.7 V
Continuous Diode Forward Current IS VGS = 0 V, TC = 25 C 9 A

Applications

  • High-frequency applications
  • Solar Inverters
  • Switch Mode Power Supplies
  • UPS
  • Motor Drives
  • High Voltage DC/DC Converters
  • Battery Chargers
  • Induction Heating

2410121715_Littelfuse-LSIC1MO170E0750_C3290778.pdf

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