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quality Surface mount transistor LRC LDTD114ELT1G featuring integrated thin film resistors for driver circuits factory
quality Surface mount transistor LRC LDTD114ELT1G featuring integrated thin film resistors for driver circuits factory

Surface mount transistor LRC LDTD114ELT1G featuring integrated thin film resistors for driver circuits

Key Attributes
Model Number: LDTD114ELT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LDTD114ELT1G
Package:
SOT-23
Product Description

Product Overview

The LDTD114ELT1G is a silicon NPN surface mount transistor featuring a monolithic bias resistor network. This integrated design eliminates the need for external input resistors, simplifying circuit configuration for inverter applications. The built-in thin-film resistors offer complete isolation and minimize parasitic effects, enabling straightforward on/off condition settings for device design. Ideal for inverter, interface, and driver applications.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements
  • Qualification: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)

Technical Specifications

Model Device Marking R1 (K) R2 (K) Shipping Quantity Package
LDTD114ELT1G CA 10 10 3000/Tape & Reel SOT-23
LDTD114ELT3G CA 10 10 10000/Tape & Reel SOT-23
S-LDTD114ELT1G CA 10 10 3000/Tape & Reel SOT-23
S-LDTD114ELT3G CA 10 10 10000/Tape & Reel SOT-23
Parameter Symbol Unit Conditions Min. Typ. Max.
Absolute Maximum Ratings (Ta=25C)
Supply voltage VCC V 50
Input voltage VIN V 10 to +40
Output current IC mA 500
Power dissipation PD mW 200
Junction temperature Tj C 150
Storage temperature Tstg C 55 to +150
Electrical Characteristics (Ta=25C)
Input voltage (off) VI(off) V VCC= 5V, IO= 100A 0.1
Input voltage (on) VI(on) V VO= 0.3V, IO= 10mA 0.5
Output voltage (on) VO(on) V IO/II= 50mA/2.5mA 0.3
Input current II A VI= 5V 1
Output current IO mA VCC= 50V, VI=0V 0.5
Input resistance R1 k VO= 5V, IO= 50mA 7 10
DC current gain GI VCE=10V, IE= 50mA, f=100MHz 56 200
Resistance ratio R2/R1 0.88 1 1.2
Transition frequency fT MHz 13
*Characteristics of built-in transistor
Dimension Symbol Inches Millimeters
A A 0.1102 - 0.1197 2.80 - 3.04
B B 0.0472 - 0.0551 1.20 - 1.40
C C 0.0350 - 0.0440 0.89 - 1.11
D D 0.0150 - 0.0200 0.37 - 0.50
G G 0.0701 - 0.0807 1.78 - 2.04
H H 0.0005 - 0.0040 0.013 - 0.100
J J 0.0034 - 0.0070 0.085 - 0.177
K K 0.0140 - 0.0285 0.35 - 0.69
L L 0.0350 - 0.0401 0.89 - 1.02
S S 0.0830 - 0.1039 2.10 - 2.64
V V 0.0177 - 0.0236 0.45 - 0.60

2212131909_LRC-LDTD114ELT1G_C5273242.pdf

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