Power MOSFET Littelfuse IXTX200N10L2 Featuring Linear Operation and Forward Bias Safe Operating Area
Key Attributes
Model Number:
IXTX200N10L2
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
610pF@25V
Pd - Power Dissipation:
1.04kW
Input Capacitance(Ciss):
23nF@25V
Gate Charge(Qg):
540nC@10V
Mfr. Part #:
IXTX200N10L2
Package:
PLUS-247
Product Description
Product Overview
The IXTK200N10L2 and IXTX200N10L2 are N-Channel Enhancement Mode Power MOSFETs designed for linear operation. They feature avalanche rating and guaranteed FBSOA (Forward-Bias Safe Operating Area). These MOSFETs offer advantages such as easy mounting, space savings, and high power density, making them suitable for applications like solid-state circuit breakers, soft start controls, linear amplifiers, programmable loads, and current regulators.
Product Attributes
- Brand: IXYS
- Origin: USA (implied by patents and copyright)
- Material: Not specified
- Color: Not specified
- Certifications: Covered by multiple U.S. patents (list provided in source)
Technical Specifications
| Symbol | Test Conditions | Min. | Typ. | Max. | Unit | Part Number |
| VDSS | TJ = 25C to 150C | 100 | V | IXTK200N10L2, IXTX200N10L2 | ||
| VDGR | TJ = 25C to 150C, RGS = 1M | 100 | V | IXTK200N10L2, IXTX200N10L2 | ||
| VGSS Continuous | 20 | V | IXTK200N10L2, IXTX200N10L2 | |||
| VGSM Transient | 30 | V | IXTK200N10L2, IXTX200N10L2 | |||
| ID25 | TC = 25C (Chip Capability) | 200 | A | IXTK200N10L2, IXTX200N10L2 | ||
| ILRMS | Lead Current Limit, (RMS) | 160 | A | IXTK200N10L2, IXTX200N10L2 | ||
| IDM | TC = 25C, Pulse Width Limited by TJM | 500 | A | IXTK200N10L2, IXTX200N10L2 | ||
| IA | TC = 25C | 100 | A | IXTK200N10L2, IXTX200N10L2 | ||
| EAS | TC = 25C | 5 | J | IXTK200N10L2, IXTX200N10L2 | ||
| PD | TC = 25C | 1040 | W | IXTK200N10L2, IXTX200N10L2 | ||
| TJ | -55 | 150 | C | IXTK200N10L2, IXTX200N10L2 | ||
| TJM | 150 | C | IXTK200N10L2, IXTX200N10L2 | |||
| Tstg | -55 | 150 | C | IXTK200N10L2, IXTX200N10L2 | ||
| TL | 1.6mm (0.063 in.) from Case for 10s | 300 | C | IXTK200N10L2, IXTX200N10L2 | ||
| TSOLD | Plastic Body for 10s | 260 | C | IXTK200N10L2, IXTX200N10L2 | ||
| Md | Mounting Torque (IXTK) | 1.13/10 | Nm/lb.in. | IXTK200N10L2 | ||
| FC | Mounting Force (IXTX) | 20..120 | N/lb. | IXTX200N10L2 | ||
| Weight | TO-264 | 10 | g | IXTK200N10L2 | ||
| Weight | PLUS247 | 6 | g | IXTX200N10L2 | ||
| BVDSS | VGS = 0V, ID = 1mA | 100 | V | IXTK200N10L2, IXTX200N10L2 | ||
| VGS(th) | VDS = VGS, ID = 3mA | 2.0 | 4.5 | V | IXTK200N10L2, IXTX200N10L2 | |
| IGSS | VGS = 20V, VDS = 0V | 200 | nA | IXTK200N10L2, IXTX200N10L2 | ||
| IDSS | VDS = VDSS, VGS = 0V | 10 | A | IXTK200N10L2, IXTX200N10L2 | ||
| IDSS | TJ = 125C | 250 | A | IXTK200N10L2, IXTX200N10L2 | ||
| RDS(on) | VGS = 10V, ID = 0.5 ID25, Note 1 | 11 | m | IXTK200N10L2, IXTX200N10L2 | ||
| gfs | VDS= 10V, ID = 60A, Note 1 | 55 | 73 | 90 | S | IXTK200N10L2, IXTX200N10L2 |
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 2300 | pF | IXTK200N10L2, IXTX200N10L2 | ||
| Coss | VGS = 0V, VDS = 25V, f = 1MHz | 3200 | pF | IXTK200N10L2, IXTX200N10L2 | ||
| Crss | VGS = 0V, VDS = 25V, f = 1MHz | 610 | pF | IXTK200N10L2, IXTX200N10L2 | ||
| td(on) | Resistive Switching Times | 40 | ns | IXTK200N10L2, IXTX200N10L2 | ||
| tr | Resistive Switching Times | 225 | ns | IXTK200N10L2, IXTX200N10L2 | ||
| td(off) | Resistive Switching Times | 127 | ns | IXTK200N10L2, IXTX200N10L2 | ||
| tf | Resistive Switching Times | 27 | ns | IXTK200N10L2, IXTX200N10L2 | ||
| Qg(on) | VGS= 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 540 | nC | IXTK200N10L2, IXTX200N10L2 | ||
| Qgs | VGS= 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 115 | nC | IXTK200N10L2, IXTX200N10L2 | ||
| Qgd | VGS= 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 226 | nC | IXTK200N10L2, IXTX200N10L2 | ||
| RthJC | 0.12 | C/W | IXTK200N10L2, IXTX200N10L2 | |||
| RthCS | 0.15 | C/W | IXTK200N10L2, IXTX200N10L2 | |||
| SOA | VDS = 100V, ID = 6.25A, TC = 75C, tp = 5s | 625 | W | IXTK200N10L2, IXTX200N10L2 | ||
| IS | VGS = 0V | 200 | A | IXTK200N10L2, IXTX200N10L2 | ||
| ISM | Repetitive, Pulse Width Limited by TJM | 800 | A | IXTK200N10L2, IXTX200N10L2 | ||
| VSD | IF = 100A, VGS = 0V, Note 1 | 1.4 | V | IXTK200N10L2, IXTX200N10L2 | ||
| trr | IF = 100A, -di/dt = 100A/s, VR = 50V, VGS = 0V | 245 | ns | IXTK200N10L2, IXTX200N10L2 | ||
| IRM | IF = 100A, -di/dt = 100A/s, VR = 50V, VGS = 0V | 24.4 | A | IXTK200N10L2, IXTX200N10L2 | ||
| QRM | IF = 100A, -di/dt = 100A/s, VR = 50V, VGS = 0V | 3.0 | C | IXTK200N10L2, IXTX200N10L2 |
2411200042_Littelfuse-IXTX200N10L2_C7211789.pdf
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