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quality Monolithic Bias Resistor Network Transistor LRC LDTD143ELT1G for Inverter and Interface Electronics factory
quality Monolithic Bias Resistor Network Transistor LRC LDTD143ELT1G for Inverter and Interface Electronics factory

Monolithic Bias Resistor Network Transistor LRC LDTD143ELT1G for Inverter and Interface Electronics

Key Attributes
Model Number: LDTD143ELT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LDTD143ELT1G
Package:
SOT-23
Product Description

Product Overview

The LDTD143ELT1G/LDTD143ELT3G is a NPN Silicon Surface Mount Transistor featuring a monolithic bias resistor network. This integrated design simplifies inverter circuit configuration by eliminating the need for external input resistors. The built-in thin-film resistors offer positive input biasing and minimize parasitic effects, making device design easier by only requiring setting of on/off conditions. It is suitable for Inverter, Interface, and Driver applications.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements
  • Package Type: SOT-23
  • Special Prefix (S-): For Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Technical Specifications

Model Device Marking R1 (K) R2 (K) Shipping
LDTD143ELT1G E6 4.7 4.7 3000/Tape & Reel
LDTD143ELT3G E6 4.7 4.7 10000/Tape & Reel
S-LDTD143ELT1G E6 4.7 4.7 3000/Tape & Reel
S-LDTD143ELT3G E6 4.7 4.7 10000/Tape & Reel
Parameter Symbol Min. Typ. Max. Unit Conditions
Absolute Maximum Ratings (Ta=25C)
Supply voltage VCC - - 50 V
Input voltage VIN -10 - +30 V
Output current IC - - 500 mA
Power dissipation PD - - 200 mW
Junction temperature Tj -55 - +150 C
Storage temperature Tstg -55 - +150 C
Electrical Characteristics (Ta=25C)
Input voltage (off) VI (off) - - 0.3 V VCC=5V, IO=100A
Input voltage (on) VI (on) 1.8 - - V VO=0.3V, IO=20mA
Output voltage (on) VO (on) - 0.3 - V IO / II=50mA / 2.5mA
Input current II - - 1 A VI=5V
Output current IO - - 200 mA VCC=50V, VI=0V
DC current gain GI - - - VO=5V, IO=50mA
Input resistance R1 3.29 4.7 6.11 k VCE=10V, IE= 50mA, f=100MHz
Resistance ratio R2 / R1 - 1 -
Transition frequency fT - 200 - MHz
Dimension MIN MAX MIN MAX
INCHES INCHES MILLIMETERS MILLIMETERS
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

2212131909_LRC-LDTD143ELT1G_C5273247.pdf

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