Compact SOT-363 Package Dual Bias Resistor Transistors LRC LMUN5314DW1T1G for Surface Mount Circuits
Key Attributes
Model Number:
LMUN5314DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
10kΩ
Resistor Ratio:
0.21
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN5314DW1T1G
Package:
SOT-363
Product Description
Dual Bias Resistor Transistors
Product Overview
The LMUN5311DW1T1G Series features Dual Bias Resistor Transistors (BRT) in a SOT-363/SC-88 package, designed for low power surface mount applications where board space is limited. Each BRT integrates a single transistor with a monolithic bias network, comprising a series base resistor and a base-emitter resistor, to replace discrete components and their external bias networks. This integration simplifies circuit design, reduces board space, and lowers component count. The series offers both NPN and PNP silicon surface mount transistors with a monolithic bias resistor network.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package: SOT-363/SC-88
- Material Compliance: RoHS requirements and Halogen Free
- Automotive Option: S- prefix for AEC-Q101 qualified and PPAP capable applications.
Technical Specifications
| Model | Package | R1 (k) | R2 (k) | Shipping | ||
|---|---|---|---|---|---|---|
| LMUN5311DW1T1G | SOT-363 | 11 | 10 | 3000/Tape&Reel | ||
| LMUN5311DW1T3G | SOT-363 | 11 | 10 | 10000/Tape&Reel | ||
| LMUN5312DW1T1G | SOT-363 | 12 | 22 | 3000/Tape&Reel | ||
| LMUN5312DW1T3G | SOT-363 | 12 | 22 | 10000/Tape&Reel | ||
| LMUN5313DW1T1G | SOT-363 | 13 | 47 | 3000/Tape&Reel | ||
| LMUN5313DW1T3G | SOT-363 | 13 | 47 | 10000/Tape&Reel | ||
| LMUN5314DW1T1G | SOT-363 | 14 | 10 | 3000/Tape&Reel | ||
| LMUN5314DW1T3G | SOT-363 | 14 | 10 | 10000/Tape&Reel | ||
| LMUN5315DW1T1G | SOT-363 | 15 | 10 | 3000/Tape&Reel | ||
| LMUN5315DW1T3G | SOT-363 | 15 | 10 | 10000/Tape&Reel | ||
| LMUN5316DW1T1G | SOT-363 | 16 | 4.7 | 3000/Tape&Reel | ||
| LMUN5316DW1T3G | SOT-363 | 16 | 4.7 | 10000/Tape&Reel | ||
| LMUN5330DW1T1G | SOT-363 | 30 | 1 | 3000/Tape&Reel | ||
| LMUN5330DW1T3G | SOT-363 | 30 | 1 | 10000/Tape&Reel | ||
| LMUN5331DW1T1G | SOT-363 | 31 | 2.2 | 3000/Tape&Reel | ||
| LMUN5331DW1T3G | SOT-363 | 31 | 2.2 | 10000/Tape&Reel | ||
| LMUN5332DW1T1G | SOT-363 | 32 | 4.7 | 3000/Tape&Reel | ||
| LMUN5332DW1T3G | SOT-363 | 32 | 4.7 | 10000/Tape&Reel | ||
| LMUN5333DW1T1G | SOT-363 | 33 | 4.7 | 3000/Tape&Reel | ||
| LMUN5333DW1T3G | SOT-363 | 33 | 4.7 | 10000/Tape&Reel | ||
| LMUN5334DW1T1G | SOT-363 | 34 | 22 | 3000/Tape&Reel | ||
| LMUN5334DW1T3G | SOT-363 | 34 | 22 | 10000/Tape&Reel | ||
| LMUN5335DW1T1G | SOT-363 | 35 | 2.2 | 3000/Tape&Reel | ||
| LMUN5335DW1T3G | SOT-363 | 35 | 2.2 | 10000/Tape&Reel | ||
| Maximum Ratings (TA = 25C unless otherwise noted) | ||||||
| Rating | Symbol | Value | Unit | Notes | ||
| Collector-Base Voltage | VCBO | 50 | Vdc | Common for Q1 and Q2 | ||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | Common for Q1 and Q2 | ||
| Collector Current | IC | 100 | mAdc | Common for Q1 and Q2 | ||
| Thermal Characteristics (TA = 25C unless otherwise noted) | ||||||
| Characteristic | Symbol | Max | Unit | Notes | ||
| Total Device Dissipation (One Junction Heated) | PD | 187 | mW | Note 1 | ||
| Derate above 25C (One Junction Heated) | 1.5 | mW/C | Note 1 | |||
| Thermal Resistance, Junction-to-Ambient (One Junction Heated) | RJA | 670 | C/W | Note 1 | ||
| Total Device Dissipation (Both Junctions Heated) | PD | 250 | mW | Note 1 | ||
| Derate above 25C (Both Junctions Heated) | 2.0 | mW/C | Note 1 | |||
| Thermal Resistance, Junction-to-Ambient (Both Junctions Heated) | RJA | 493 | C/W | Note 1 | ||
| Thermal Resistance, Junction-to-Lead (Both Junctions Heated) | RJL | 188 | C/W | Note 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | C | |||
| Electrical Characteristics (TA = 25C unless otherwise noted) | ||||||
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc | IC = 10 A, IE = 0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc | Note 3, IC = 2.0 mA, IB = 0 |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc | VCB = 50 V, IE = 0 |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc | VCE = 50 V, IB = 0 |
1912111437_LRC-LMUN5314DW1T1G_C417318.pdf
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