Silicon Carbide Power MOSFET LGE LGE3M50120Q Featuring Kelvin Connection and Fast Recovery Diode for Systems
Key Attributes
Model Number:
LGE3M50120Q
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
58A
Operating Temperature -:
-55℃~+175℃
RDS(on):
50mΩ
Reverse Transfer Capacitance (Crss@Vds):
5.2pF
Output Capacitance(Coss):
106pF
Input Capacitance(Ciss):
2.75nF
Pd - Power Dissipation:
344W
Gate Charge(Qg):
120nC
Mfr. Part #:
LGE3M50120Q
Package:
TO-247-4
Product Description
Product Overview
The LGE3M50120Q is a Silicon Carbide Power MOSFET designed for high-voltage applications. It features high voltage, low on-resistance, high speed, and low parasitic capacitance, along with a fast recovery diode and Kelvin connection for the driver. This device offers higher system efficiency, convenience for parallel operation without thermal runaway, suitability for high-temperature applications, and enhanced reliability in hard switching conditions, making it easy to drive.
Product Attributes
- Brand: LG SEMI
- Part Number: LGE3M50120Q
- Package: TO-247-4
- Material: Silicon Carbide
- Origin: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | Min. | Typ. | Max. |
| Maximum Ratings | VDS | 1200 | V | VGS = 0V ID =100A | |||
| VGS | -5 to 20 | V | Recommended maximum | ||||
| ID | 58 | A | VGS = 20V, TC= 25C | ||||
| IDM | 145 | A | Pulsed drain current | ||||
| Electrical Characteristics | IDSS | 5 | A | VDS = 1200V VGS = 0V | 100 | ||
| IGSS | 100 | nA | VDS = 0V VGS = -5~20V | ||||
| VTH | 3.2 | V | VGS = VDS ID = 6mA | 2.2 | |||
| On-State Resistance | RON | 50 | m | VGS = 20V ID = 20A | 80 | ||
| TJ = 25 | |||||||
| TJ = 175 | 65 | ||||||
| Capacitance | Ciss | 2750 | pF | VDS = 800V VGS = 0V f = 1MHZ VAC = 25mV | |||
| Coss | 106 | pF | |||||
| Crss | 5.2 | pF | |||||
| Switching Characteristics | Qg | 120 | nC | VDS = 800V ID = 20A VGS = -5 to 20V | |||
| EON | 455.4 | J | VDS = 800V, ID = 30A, VGS = -2 to 20V, RG(ext) =3.3, L = 450H | ||||
| EOFF | 213.6 | J | |||||
| Reverse Diode Characteristics | VSD | 4.9 | V | ISD = 20A VGS = 0V | 4.4 | ||
| trr | 44.4 | ns | VGS= -2V/+20V, ISD = 30A, VR = 800V, di/dt = 1000A/us, RG(ext ) =10 L = 450H | ||||
| Qrr | 212.6 | nC | |||||
| IRRM | 10.8 | A |
2410301412_LGE-LGE3M50120Q_C25705283.pdf
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