Schottky diode common cathode configuration Littelfuse IXYS DSA90C200HB for switch mode power supplies
Key Attributes
Model Number:
DSA90C200HB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
820A
Reverse Leakage Current (Ir):
900uA@200V
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
1.18V@90A
Current - Rectified:
45A
Mfr. Part #:
DSA90C200HB
Package:
TO-247AD
Product Description
Product Overview
The DSA90C200HB is a high-performance Schottky diode featuring common cathode configuration and Gen technology. It offers very low forward voltage (Vf), extremely low switching losses, and low reverse recovery current (Irm) values, contributing to improved thermal behavior and reliable circuit operation. This diode is designed for applications requiring low voltage peaks, reduced protection circuits, and low noise switching, making it ideal for rectifiers in switch mode power supplies (SMPS) and as a free-wheeling diode in low voltage converters.
Product Attributes
- Brand: IXYS
- Technology: Gen
- Configuration: Common Cathode
- Package: TO-247 (Industry standard outline)
- Compliance: RoHS compliant
- Epoxy meets: UL 94V-0
Technical Specifications
| Symbol | Definition | Conditions | min. | typ. | max. | Unit |
|---|---|---|---|---|---|---|
| VRRM | Repetitive reverse blocking voltage | TJ = 25C | 200 | V | ||
| VRSM | Non-repetitive reverse blocking voltage | 45 | V | |||
| IF(AV) | Average forward current | TC = 45C | 200 | A | ||
| IFSM | Max. forward surge current | t = 10 ms; (50 Hz), sine; TJ = 45C | 820 | A | ||
| VF0 | Threshold voltage | TJ = 25C | 1.18 | V | ||
| rF | Slope resistance for power loss calculation only | TJ = 25C | 0.52 | m | ||
| VF | Forward voltage drop | IF = 90 A; TJ = 25C | 0.86 | V | ||
| VF | Forward voltage drop | IF = 90 A; TJ = 175C | 1.14 | V | ||
| IR | Reverse current, drain current | VR = 45 V; TJ = 25C | 125 | A | ||
| IR | Reverse current, drain current | VR = 200 V; TJ = 175C | 45 | mA | ||
| CJ | Junction capacitance | VR = 24 V; f = 1 MHz; TJ = 25C | 261 | pF | ||
| Ptot | Total power dissipation | TC = 25C | 275 | W | ||
| ZthJC | Thermal resistance junction to case | 0.25 | K/W | |||
| ZthCH | Thermal resistance case to heatsink | 0.55 | K/W | |||
| TJ | Virtual junction temperature | -55 | 175 | C | ||
| Tstg | Storage temperature | -55 | 150 | C | ||
| Weight | 6 | g | ||||
| Mounting torque | 1.2 | Nm | ||||
| Mounting force with clip | 120 | N |
Dimensions (TO-247)
| Sym. | Inches | Millimeter | ||
|---|---|---|---|---|
| min. | max. | min. | max. | |
| A | 0.185 | 0.209 | 4.70 | 5.30 |
| A1 | 0.087 | 0.102 | 2.21 | 2.59 |
| A2 | 0.059 | 0.098 | 1.50 | 2.49 |
| D | 0.819 | 0.845 | 20.79 | 21.45 |
| E | 0.610 | 0.640 | 15.48 | 16.24 |
| E2 | 0.170 | 0.216 | 4.31 | 5.48 |
| e | 0.215 BSC | 5.46 BSC | ||
| L | 0.780 | 0.800 | 19.80 | 20.30 |
| L1 | - | 0.177 | - | 4.49 |
| P | 0.140 | 0.144 | 3.55 | 3.65 |
| Q | 0.212 | 0.244 | 5.38 | 6.19 |
| S | 0.242 BSC | 6.14 BSC | ||
| b | 0.039 | 0.055 | 0.99 | 1.40 |
| b2 | 0.065 | 0.094 | 1.65 | 2.39 |
| b4 | 0.102 | 0.135 | 2.59 | 3.43 |
| c | 0.015 | 0.035 | 0.38 | 0.89 |
| D1 | 0.515 | - | 13.07 | - |
| D2 | 0.020 | 0.053 | 0.51 | 1.35 |
| E1 | 0.530 | - | 13.45 | - |
| P1 | - | 0.29 | - | 7.39 |
2411280040_Littelfuse-IXYS-DSA90C200HB_C480636.pdf
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