86--14775986446
quality fast recovery diode Littelfuse IXYS DSEP2X61-12A suitable for SMPS UPS and snubber applications factory
quality fast recovery diode Littelfuse IXYS DSEP2X61-12A suitable for SMPS UPS and snubber applications factory

fast recovery diode Littelfuse IXYS DSEP2X61-12A suitable for SMPS UPS and snubber applications

Key Attributes
Model Number: DSEP2X61-12A
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@1.2kV
Reverse Recovery Time (trr):
40ns
Operating Junction Temperature Range:
-40℃~+150℃
Diode Configuration:
2 Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
2.84V@120A
Current - Rectified:
60A
Mfr. Part #:
DSEP2X61-12A
Package:
SOT-227
Product Description

Product Overview

The DSEP2x61-12A is a high-performance fast recovery diode featuring low loss and soft recovery characteristics. Designed with parallel legs and HiPerFRED technology, it offers very short recovery times, improved thermal behavior, and very low reverse recovery current (Irm) values. Its soft reverse recovery minimizes EMI/RFI, and low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal for antiparallel configurations in high-frequency switching devices, antisaturation, snubber, and free-wheeling applications, as well as rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: SOT-227B (minibloc)
  • RoHS Compliant: Yes
  • Epoxy Material: Meets UL 94V-0
  • Base Plate Material: Copper, internally DCB isolated
  • Isolation Voltage: 3000 V~ (RMS)

Technical Specifications

Symbol Definition Conditions Unit Typ. Max. Min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 1200
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 1200
IF(AV) average forward current TC = 100C A 2x61
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 1200
IFSM max. forward surge current rectangular pulse, tp = 0.5 s; TVJ = 150C A 800
Ptot total power dissipation TC = 25C W 200
VF0 threshold voltage TVJ = 150C V 1.15
rF slope resistance for power loss calculation only TVJ = 150C m 6.2
VF forward voltage drop IF = 60 A; TVJ = 100C V 1.52 1.92
VF forward voltage drop IF = 120 A; TVJ = 100C V 2.42 2.84
IR reverse current, drain current VR = 1200 V; TVJ = 100C mA 0.6
CJ junction capacitance VR = 600 V; f = 1 MHz pF 48
trr reverse recovery time IF = 60 A; -diF/dt = 20 A/s; TVJ = 100C ns 250
IRM max. reverse recovery current IF = 60 A; -diF/dt = 20 A/s; TVJ = 100C A 13
RthJC thermal resistance junction to case K/W 0.10
RthCH thermal resistance case to heatsink K/W 0.5
TVJ virtual junction temperature C 150 -40
Tstg storage temperature C 150 -40
Isolation Voltage t = 1 second V 3000 2500
Isolation Voltage t = 1 minute V 3000
Mounting torque Nm 1.5
Terminal torque Nm 1.1
Weight g 30

2411220146_Littelfuse-IXYS-DSEP2X61-12A_C440800.pdf

Related Products
quality Slkor PDTC114ET factory
Slkor PDTC114ET
Product OverviewThis product features built-in bias resistors, simplifying inverter circuit configuration without external components. The thin-film isolation resistors allow for negative input biasing and minimize parasitic effects, making device design easy by only requiring on/off condition ...
quality Slkor DTC143ECA factory
Slkor DTC143ECA
Product OverviewThe Digital Transistor DTC(R1=R2 SERIES)CA is an epitaxial planar die construction NPN style digital transistor. It features built-in biasing resistors (R1=R2) and complementary PNP types are available (DTA). This device is also offered in a lead-free version and is suitable for ...
quality Slkor DTC143ZCA factory
Slkor DTC143ZCA
Product OverviewThe Digital Transistor DTC(R1R2 SERIES) is an epitaxial planar die construction NPN style digital transistor with built-in biasing resistors (R1R2). Complementary PNP types (DTA) are available. It is suitable for various applications and also offered in a lead-free version.Product ...
quality switching Slkor SL4459 P Channel MOSFET with low gate voltage and robust current handling capability factory
switching Slkor SL4459 P Channel MOSFET with low gate voltage and robust current handling capability
Product OverviewThe SL4459 P-Channel MOSFET utilizes advanced trench technology, offering excellent RDS(ON) and low gate charge. It operates with gate voltages as low as 4.5V, making it suitable for load switch and PWM applications. This device provides high power and current handling capability...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.