Soft recovery diode Littelfuse IXYS DSEP2X91-06A designed for high frequency switching and snubber diode

Key Attributes
Model Number: DSEP2X91-06A
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@600V
Reverse Recovery Time (trr):
30ns
Operating Junction Temperature Range:
-40℃~+150℃
Diode Configuration:
2 Independent
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
2.05V@90A
Current - Rectified:
90A
Mfr. Part #:
DSEP2X91-06A
Package:
SOT-227B
Product Description

Product Overview

The DSEP2x91-06A is a high-performance fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current and extremely short recovery times, contributing to improved thermal behavior and reduced power dissipation. Its soft reverse recovery minimizes EMI/RFI, and avalanche voltage rating ensures reliable operation. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode, as well as in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: SOT-227B (minibloc)
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Base plate: Copper internally DCB isolated
  • Isolation Voltage: 3000 V~

Technical Specifications

Symbol Definition Conditions Unit min. typ. max.
VRRM max. repetitive reverse blocking voltage V 600
VR(A) Avalanche voltage V 600
IFAVM average forward current TC = 100C A 100
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TC = 45C kA 1.00
VF0 threshold voltage TVJ = 150C V 1.08
rF slope resistance for power loss calculation only TVJ = 150C m 2.4
I R reverse current, drain current VR = 600V; TVJ = 25C mA 4
I R reverse current, drain current VR = 600V; TVJ = 150C mA 150
VF forward voltage drop IF = 180 A; TVJ = 25C V 1.72
VF forward voltage drop IF = 180 A; TVJ = 150C V 1.39
Ptot total power dissipation TC = 25C W 200
RthJC thermal resistance junction to case K/W 0.6
RthCH thermal resistance case to heatsink K/W 0.10
TVJ virtual junction temperature C -40 150
Tstg storage temperature C -40 150
ISOL isolation voltage 50/60 Hz, RMS; I 1 mA; t = 1 second V RMS 3000
Weight g 30
Mounting torque Nm 1.1 1.5
Terminal torque Nm 1.1 1.5
CJ junction capacitance VJ = 400 V; f = 1 MHz pF 107

2411220204_Littelfuse-IXYS-DSEP2X91-06A_C499445.pdf

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