fast recovery diode Littelfuse IXYS DSEP8-06A suitable for switching power supplies and UPS applications
Key Attributes
Model Number:
DSEP8-06A
Product Custom Attributes
Reverse Leakage Current (Ir):
60uA@600V
Reverse Recovery Time (trr):
30ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
2.32V@20A
Current - Rectified:
10A
Mfr. Part #:
DSEP8-06A
Package:
TO-220AC-2
Product Description
IXYS DSEP8-06A HiPerFRED Fast Recovery Diode
Product Overview
The IXYS DSEP8-06A is a high-performance, single fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, extremely short recovery times, and improved thermal behavior. Its very low Irm-values and soft reverse recovery contribute to reduced power dissipation and lower turn-on losses in commutating switches, minimizing EMI/RFI. This diode is ideal for use as an antiparallel diode in high-frequency switching devices, antisaturation diode, snubber diode, and freewheeling diode, as well as in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Package: TO-220
- RoHS Compliant
- Epoxy meets UL 94V-0
Technical Specifications
| Symbol | Definition | Conditions | Unit | typ. | max. | min. |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | V | 600 | ||
| IF(AV) | average forward current | rectangular d = 0.5 | A | 20 | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | A | 600 | ||
| VF | forward voltage drop | IF = 10 A; TVJ = 25C | V | 1.68 | ||
| VF0 | threshold voltage | TVJ = 25C | V | 1.03 | ||
| rF | slope resistance for power loss calculation only | TVJ = 25C | m | 25 | ||
| IR | reverse current, drain current | VR = 600 V; TVJ = 25C | A | 150 | ||
| IR | reverse current, drain current | VR = 600 V; TVJ = 175C | mA | 0.25 | ||
| Ptot | total power dissipation | TC = 25C | W | 135 | ||
| RthJC | thermal resistance junction to case | K/W | 1.03 | |||
| RthCH | thermal resistance case to heatsink | K/W | 0.50 | |||
| trr | reverse recovery time | IF = 1 A; -diF/dt = 20 A/s; VR = 300 V; TVJ = 100C | ns | 30 | ||
| IRM | max. reverse recovery current | IF = 1 A; -diF/dt = 20 A/s; VR = 300 V; TVJ = 100C | A | 6 | ||
| Qr | reverse recovery charge | IF = 1 A; -diF/dt = 20 A/s; VR = 300 V; TVJ = 100C | C | 0.5 | ||
| CJ | junction capacitance | VR = 400 V; f = 1 MHz; TVJ = 25C | pF | 150 | ||
| TVJ | virtual junction temperature | C | 175 | -55 | ||
| Tstg | storage temperature | C | 150 | -55 | ||
| Mounting Torque | Nm | 0.4 | 0.6 | |||
| Mounting Force with clip | N | 20 | 60 |
Dimensions (TO-220):
| Dim | Millimeter | Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.32 | 4.82 | 0.170 | 0.190 |
| A1 | 1.14 | 1.39 | 0.045 | 0.055 |
| A2 | 2.29 | 2.79 | 0.090 | 0.110 |
| b | 0.64 | 1.01 | 0.025 | 0.040 |
| b2 | 1.15 | 1.65 | 0.045 | 0.065 |
| C | 0.35 | 0.56 | 0.014 | 0.022 |
| D | 14.73 | 16.00 | 0.580 | 0.630 |
| E | 9.91 | 10.66 | 0.390 | 0.420 |
| e | 5.08 BSC | 0.200 BSC | ||
| H1 | 5.85 | 6.85 | 0.230 | 0.270 |
| L | 12.70 | 13.97 | 0.500 | 0.550 |
| L1 | 2.79 | 5.84 | 0.110 | 0.230 |
| P | 3.54 | 4.08 | 0.139 | 0.161 |
| Q | 2.54 | 3.18 | 0.100 | 0.125 |
2411220112_Littelfuse-IXYS-DSEP8-06A_C461302.pdf
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