Schottky Diode LRC LRB751V-40T1G 40 Volt Peak Reverse Voltage Low Voltage Drop RoHS Halogen Free

Key Attributes
Model Number: LRB751V-40T1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200mA
Reverse Leakage Current (Ir):
500nA
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
370mV
Current - Rectified:
30mA
Mfr. Part #:
LRB751V-40T1G
Package:
SOD-323
Product Description

Product Overview

The LRB751V-40T1G and S-LRB751V-40T1G are Schottky Barrier Diodes designed for low-power rectification. The S-prefix variants are qualified for automotive applications with unique site and control change requirements, meeting AEC-Q101 standards and PPAP capability. These diodes offer low reverse current, low voltage, and high reliability, with materials compliant with RoHS and Halogen Free requirements.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified (S-prefix only)
  • PPAP Capable: Yes (S-prefix only)

Technical Specifications

ParameterSymbolLimitsUnitDevice MarkingShippingPart Number
Peak Reverse VoltageVRM40V5E3000/Tape&ReelLRB751V-40T1G
DC Reverse VoltageVR30VLRB751V-40T3G
Mean Rectifying CurrentIO200mA5E10000/Tape&ReelLRB751V-40T1G
Peak Forward Surge CurrentIFSM30mALRB751V-40T3G
Total Device Dissipation, FR5 Board (@ TA = 25C)PD200mWLRB751V-40T1G, S-LRB751V-40T1G
Derate above 25C1.57mW/CLRB751V-40T1G, S-LRB751V-40T1G
Thermal Resistance, JunctiontoAmbientRJA635C/WLRB751V-40T1G, S-LRB751V-40T1G
Junction and Storage temperatureTJ,Tstg40+125CLRB751V-40T1G, S-LRB751V-40T1G
Forward voltage (IF=1mA)VF-VLRB751V-40T1G, S-LRB751V-40T1G
Reverse Current (VR=30V)IR-ALRB751V-40T1G, S-LRB751V-40T1G
Diode Capacitance (VR = 1V, f = 1.0 MHz)CT-pFLRB751V-40T1G, S-LRB751V-40T1G

2410010302_LRC-LRB751V-40T1G_C131730.pdf

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