Avalanche Rated Polar Power MOSFET Littelfuse IXTY02N120P for Robotics Laser Drivers and Servo Controls

Key Attributes
Model Number: IXTY02N120P
Product Custom Attributes
Mfr. Part #:
IXTY02N120P
Package:
TO-252AA
Product Description

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

The IXTY02N120P and IXTP02N120P are PolarTM Power MOSFETs designed for high-performance applications. These N-Channel Enhancement Mode MOSFETs are avalanche rated, offering robust performance and reliability. Key features include low QG, low package inductance, and a fast intrinsic rectifier, contributing to high power density, ease of mounting, and space savings. They are ideal for use in DC-DC converters, switch-mode and resonant-mode power supplies, AC and DC motor drives, laser drivers, igniters, RF generators, robotics, and servo controls.

Product Attributes

  • Brand: IXYS
  • Origin: USA (implied by patents)
  • Package Types: TO-252 (IXTY), TO-220 (IXTP)
  • Certifications: Covered by multiple U.S. patents.

Technical Specifications

Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. Units
BVDSS VGS = 0V, ID = 250µA 1200 V
VGS = 0V, ID = 250µA 1200 V
VGS(th) VDS = VGS, ID = 100µA 2.0 4.0 V
IGSS VGS = ±20V, VDS = 0V ±50 nA
IDSS VDS = VDSS, VGS = 0V 1 µA
TJ = 125°C 25 µA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 75 Ω
VDSS TJ = 25°C to 150°C 1200 V
VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC = 25°C 0.2 A
IDM TC = 25°C, Pulse Width Limited by TJM 0.6 A
IA TC = 25°C 0.2 A
EAS TC = 25°C 40 mJ
dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PD TC = 25°C 33 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
Md Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
Weight TO-220 3.00 g
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 0.12 0.20 S
Ciss VGS = 0V, VDS = 25V, f = 1MHz 104 p F
Coss VGS = 0V, VDS = 25V, f = 1MHz 8.6 p F
Crss VGS = 0V, VDS = 25V, f = 1MHz 1.9 p F
td(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 50Ω (External) 6 ns
tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 50Ω (External) 10 ns
td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 50Ω (External) 21 ns
tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 50Ω (External) 39 ns
Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 4.70 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 0.37 nC
Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 3.20 nC
RthJC 3.8 °C/W
RthCS TO-220 0.50 °C/W
IS VGS = 0V 0.2 A
ISM Repetitive, Pulse Width Limited by TJM 0.8 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr IF = 0.2A, -di/dt = 100A/µs, VR = 100V 1.6 µs
IRM IF = 0.2A, -di/dt = 100A/µs, VR = 100V 3.5 A
QRM IF = 0.2A, -di/dt = 100A/µs, VR = 100V 2.8 µC

2411200041_Littelfuse-IXTY02N120P_C6069436.pdf

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