Power Switching MOSFET Littelfuse IXFN230N20T Featuring N Channel Avalanche Rated Diode and Low RDSon
Key Attributes
Model Number:
IXFN230N20T
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
220A
RDS(on):
7.5mΩ@10V,60A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
60pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
1.09kW
Input Capacitance(Ciss):
-
Gate Charge(Qg):
358nC@10V
Mfr. Part #:
IXFN230N20T
Package:
SOT-227B
Product Description
Product Overview
The IXFN230N20T is a GigaMOSTM Power MOSFET from IXYS, featuring N-Channel Enhancement Mode with Avalanche Rated and Fast Intrinsic Diode. It offers high current handling capability, low RDS(on), and is designed for easy mounting and space savings, enabling high power density. This MOSFET is suitable for various high-speed power switching applications.
Product Attributes
- Brand: IXYS
- Package: miniBLOC, SOT-227
- Isolation Voltage: 2500 V~
- Material: Aluminium Nitride Isolation
- Origin: USA (implied by patent information)
Technical Specifications
| Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Maximum Ratings | |||||
| VDSS | TJ = 25C to 175C | 200 | V | ||
| VDGR | TJ = 25C to 175C, RGS = 1M | 200 | V | ||
| VGSS | Continuous | ±20 | V | ||
| VGSM | Transient | ±30 | V | ||
| ID25 | TC = 25C ( Chip Capability) | 220 | A | ||
| IL(RMS) | External Lead Current Limit | 200 | A | ||
| IDM | TC = 25C, Pulse Width Limited by TJM | 630 | A | ||
| IA | TC = 25C | 100 | A | ||
| EAS | TC = 25C | 5 | J | ||
| dv/dt | IS IDM, VDD VDSS, TJ 175C | 20 | V/ns | ||
| PD | TC = 25C | 1090 | W | ||
| TJ | -55 | +175 | C | ||
| TJM | 175 | C | |||
| Tstg | -55 | +175 | C | ||
| VISOL | 50/60 Hz, RMS t = 1 minute | 2500 | V~ | ||
| IISOL | t = 1 second | 3000 | V~ | ||
| Md | Mounting Torque | 1.5/13 | Nm/lb.in | ||
| Terminal Connection Torque | 1.3/11.5 | Nm/lb.in | |||
| Weight | 30 | g | |||
| Characteristic Values (TJ = 25C, Unless Otherwise Specified) | |||||
| BVDSS | VGS = 0V, ID = 3mA | 200 | V | ||
| VGS(th) | VDS = VGS, ID = 8mA | 3.0 | 5.0 | V | |
| IGSS | VGS = ±20V, VDS = 0V | ±200 | nA | ||
| IDSS | VDS = VDSS, VGS = 0V | 50 | µA | ||
| IDSS | TJ = 150C | 3 | mA | ||
| RDS(on) | VGS = 10V, ID = 60A, Note 1 | 7.5 | m | ||
| gfs | VDS = 10V, ID = 60A, Note 1 | 90 | 150 | S | |
| Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 24 | nF | ||
| Coss | 2440 | pF | |||
| Crss | 60 | pF | |||
| RGi | Gate Input Resistance | 1.15 | |||
| td(on) | Resistive Switching Times | 58 | ns | ||
| tr | 38 | ns | |||
| td(off) | 62 | ns | |||
| tf | 17 | ns | |||
| Qg(on) | VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 358 | nC | ||
| Qgs | 138 | nC | |||
| Qgd | 60 | nC | |||
| RthJC | 0.138 | C/W | |||
| RthCS | 0.15 | C/W | |||
| Source-Drain Diode | |||||
| IS | VGS = 0V | 230 | A | ||
| ISM | Repetitive, Pulse Width Limited by TJM | 920 | A | ||
| VSD | IF = 60A, VGS = 0V, Note 1 | 1.3 | V | ||
| trr | 200 | ns | |||
| QRM | 0.74 | µC | |||
| IRM | IF = 115A, VGS = 0V -di/dt = 100A/s VR = 75V | 10.6 | A | ||
2411220205_Littelfuse-IXFN230N20T_C6069251.pdf
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