1200V 100A IGBT Module Featuring Integrated Free Wheeling Diodes Littelfuse MG12100S-BN2MM for Power Systems
Key Attributes
Model Number:
MG12100S-BN2MM
Product Custom Attributes
Mfr. Part #:
MG12100S-BN2MM
Product Description
Product Overview
The MG12100S-BN2MM is a 1200V, 100A IGBT Module from Littelfuse, featuring Trench+Field Stop technology for high short circuit capability and self-limiting short circuit current. It offers a positive temperature coefficient for VCE(sat), fast switching with short tail current, and integrated free-wheeling diodes with fast and soft reverse recovery. This module is designed for high-frequency switching applications, medical applications, motion/servo control, and UPS systems.
Product Attributes
- Brand: Littelfuse
- Model: MG12100S-BN2MM
- Certifications: E71639
- RoHS: Yes
Technical Specifications
| Parameter | Test Conditions | Values | Unit |
|---|---|---|---|
| Absolute Maximum Ratings | |||
| IGBT VCES | TJ=25C | 1200 | V |
| IGBT VGES | ±20 | V | |
| IGBT IC (DC Collector Current) | TC=25C | 140 | A |
| IGBT IC (DC Collector Current) | TC=80C | 100 | A |
| IGBT ICM (Repetitive Peak Collector Current) | tp=1ms | 200 | A |
| IGBT Ptot (Power Dissipation Per IGBT) | 450 | W | |
| Diode VRRM (Repetitive Reverse Voltage) | TJ=25C | 1200 | V |
| Diode IF(AV) (Average Forward Current) | TC=25C | 140 | A |
| Diode IF(AV) (Average Forward Current) | TC=80C | 100 | A |
| Diode IFRM (Repetitive Peak Forward Current) | tp=1ms | 200 | A |
| Diode I2t | TJ =125C, t=10ms, VR=0V | 1850 | A2s |
| Module Characteristics | |||
| TJ max (Max. Junction Temperature) | 150 | °C | |
| TJ op (Operating Temperature) | -40 to 125 | °C | |
| Tstg (Storage Temperature) | -40 to 125 | °C | |
| Visol (Insulation Test Voltage) | AC, t=1min | 3000 | V |
| CTI (Comparative Tracking Index) | 350 | ||
| Torque (Module-to-Sink Recommended (M6)) | 3 to 5 | N·m | |
| Torque (Module Electrodes Recommended (M5)) | 2.5 to 5 | N·m | |
| Weight | 160 | g | |
| IGBT Electrical Characteristics | |||
| VGE(th) (Gate - Emitter Threshold Voltage) | VCE=VGE, IC=4mA | 5.0 to 6.5 | V |
| VCE(sat) (Collector - Emitter Saturation Voltage) | IC=100A, VGE=15V, TJ=25°C | 1.7 | V |
| VCE(sat) (Collector - Emitter Saturation Voltage) | IC=100A, VGE=15V, TJ=125°C | 1.9 | V |
| ICES (Collector Leakage Current) | VCE=1200V, VGE=0V, TJ=25°C | 1 | mA |
| ICES (Collector Leakage Current) | VCE=1200V, VGE=0V, TJ=125°C | 5 | mA |
| IGES (Gate Leakage Current) | VCE=0V,VGE=±15V, TJ=125°C | ±400 | nA |
| RGint (Integrated Gate Resistor) | 7.5 | Ω | |
| Qge (Gate Charge) | VCC=600V, IC=100A , VGE=±15V | 0.9 | μC |
| Cies (Input Capacitance) | VCE=25V, VGE=0V, f =1MHz | 7.1 | nF |
| Cres (Reverse Transfer Capacitance) | 0.3 | nF | |
| td(on) (Turn - on Delay Time) | VCC=600V IC=100A RG =3.9Ω VGE=±15V Inductive Load TJ =25°C | 260 | ns |
| td(on) (Turn - on Delay Time) | VCC=600V IC=100A RG =3.9Ω VGE=±15V Inductive Load TJ =125°C | 290 | ns |
| tr (Rise Time) | TJ =25°C | 30 | ns |
| tr (Rise Time) | TJ =125°C | 50 | ns |
| td(off) (Turn - off Delay Time) | TJ =25°C | 420 | ns |
| td(off) (Turn - off Delay Time) | TJ =125°C | 520 | ns |
| tf (Fall Time) | TJ =25°C | 70 | ns |
| tf (Fall Time) | TJ =125°C | 90 | ns |
| Eon (Turn - on Energy) | TJ =25°C | 7.8 | mJ |
| Eon (Turn - on Energy) | TJ =125°C | 10 | mJ |
| Eoff (Turn - off Energy) | TJ =25°C | 8 | mJ |
| Eoff (Turn - off Energy) | TJ =125°C | 10 | mJ |
| ISC (Short Circuit Current) | tpsc≤10μS , VGE=15V TJ=125°C,VCC=900V | 400 | A |
| RthJC (Junction-to-Case Thermal Resistance (Per IGBT)) | 0.28 | K/W | |
| Diode Electrical Characteristics | |||
| VF (Forward Voltage) | IF=100A , VGE=0V, TJ =25°C | 1.65 | V |
| VF (Forward Voltage) | IF=100A , VGE=0V, TJ =125°C | 1.65 | V |
| IRRM (Max. Reverse Recovery Current) | IF=100A , VR=600V diF/dt=-2500A/μs TJ =125°C | 140 | A |
| Qrr (Reverse Recovery Charge) | 20.0 | μC | |
| Erec (Reverse Recovery Energy) | 9 | mJ | |
| RthJCD (Junction-to-Case Thermal Resistance (Per Diode)) | 0.5 | K/W | |
2411010945_Littelfuse-MG12100S-BN2MM_C6226159.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
