Littelfuse IXYS DSEP2X61-03A Fast Recovery Diode Featuring Planar Passivated Chip and RoHS Compliance
Key Attributes
Model Number:
DSEP2X61-03A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600A
Reverse Leakage Current (Ir):
650uA@300V
Operating Junction Temperature Range:
-40℃~+150℃
Voltage - DC Reverse (Vr) (Max):
300V
Voltage - Forward(Vf@If):
1.51V@60A
Current - Rectified:
60A
Mfr. Part #:
DSEP2X61-03A
Product Description
Product Overview
The DSEP2x61-03A is a high-performance Fast Recovery Diode featuring low loss and soft recovery characteristics. Designed with parallel legs and HiPerFRED technology, it offers very short recovery times, improved thermal behavior, and very low reverse recovery current (Irm) values. Its soft reverse recovery behavior contributes to low EMI/RFI, while the low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode. It also serves as a rectifier in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Technology: HiPerFRED
- Chip Type: Planar passivated
- Recovery Behavior: Very soft reverse recovery
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Package: SOT-227B (minibloc)
- Base Plate: Copper internally DCB isolated
- Isolation Voltage: 3000 V~
Technical Specifications
| Symbol | Definition | Conditions | min. | typ. | max. | Unit |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | 300 | V | ||
| VRSM | max. non-repetitive reverse blocking voltage | TVJ = 25C | 650 | V | ||
| IF(AV) | average forward current | TC = 100C | 300 | A | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | 600 | A | ||
| It | t = 10 ms; (50 Hz), sine; TVJ = 45C | 1800 | As | |||
| Ptot | total power dissipation | TC = 25C | 140 | W | ||
| TVJ | virtual junction temperature | -40 | 150 | C | ||
| Tstg | storage temperature | -40 | 150 | C | ||
| RthJC | thermal resistance junction to case | Fast Diode | 0.85 | K/W | ||
| RthCH | thermal resistance case to heatsink | Fast Diode | 0.1 | K/W | ||
| VF | forward voltage drop | IF = 120 A; TVJ = 25C | 1.45 | V | ||
| VF0 | threshold voltage | TVJ = 25C | 0.79 | V | ||
| rF | slope resistance for power loss calculation only | TVJ = 25C | 5.3 | m | ||
| IR | reverse current, drain current | VR = 300 V; TVJ = 25C | 150 | A | ||
| CJ | junction capacitance | VR = 150 V; f = 1 MHz; TVJ = 25C | 170 | pF | ||
| trr | reverse recovery time | IF = 60 A; -diF/dt = 100 A/s; VR = 150 V; TVJ = 100C | 12 | ns | ||
| IRM | max. reverse recovery current | IF = 60 A; -diF/dt = 100 A/s; VR = 150 V; TVJ = 100C | 15 | A | ||
| Qr | reverse recovery charge | IF = 60 A; -diF/dt = 100 A/s; VR = 150 V; TVJ = 100C | 200 | nC | ||
| Isolation Voltage | t = 1 second | 3000 | V | |||
| Isolation Voltage | t = 1 minute | 2500 | V | |||
| Mounting Torque | 1.1 | 1.5 | Nm | |||
| Terminal Torque | 1.1 | 1.5 | Nm | |||
| Weight | 30 | g |
2411081434_Littelfuse-IXYS-DSEP2X61-03A_C21574694.pdf
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