High Frequency Switching Diode Littelfuse IXYS DSEI2X101-06A with Soft Reverse Recovery and Dissipation
Key Attributes
Model Number:
DSEI2X101-06A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1.2kA
Reverse Leakage Current (Ir):
3mA@600V
Reverse Recovery Time (trr):
80ns
Operating Junction Temperature Range:
-40℃~+150℃
Diode Configuration:
2 Independent
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
250W
Voltage - Forward(Vf@If):
1.4V@200A
Current - Rectified:
96A
Mfr. Part #:
DSEI2X101-06A
Package:
SOT-227B
Product Description
Product Overview
The DSEI2x101-06A is a Fast Recovery Epitaxial Diode (FRED) featuring parallel legs, designed for low loss and soft recovery characteristics. It offers very short recovery times, improved thermal behavior, and very low reverse recovery current (Irm) values, contributing to reduced power dissipation and turn-on losses in commutating switches. Its soft reverse recovery behavior minimizes EMI/RFI. The diode is avalanche voltage rated for reliable operation and is suitable for high-frequency switching devices, antisaturation, snubber, and free-wheeling applications, as well as rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Package: SOT-227B (minibloc)
- RoHS compliant
- Epoxy meets UL 94V-0
- Base plate: Copper internally DCB isolated
- Isolation Voltage: 3000 V~
Technical Specifications
| Symbol | Definition | Conditions | Unit | typ. | max. | min. |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | V | 600 | ||
| VRSM | max. non-repetitive reverse blocking voltage | TVJ = 25C | V | 600 | ||
| IF(AV) | average forward current | TC = 100C | A | 150 | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | kA | 1.20 | ||
| Ptot | total power dissipation | TC = 25C | W | 250 | ||
| VF | forward voltage drop | IF = 100 A; TVJ = 25C | V | 1.17 | 1.40 | |
| VF0 | threshold voltage | IF = 200 A; TVJ = 25C | V | 0.70 | ||
| rF | slope resistance for power loss calculation only | IF = 200 A; TVJ = 25C | m | 4.7 | ||
| IR | reverse current, drain current | VR = 600 V; TVJ = 25C | mA | 20 | ||
| IR | reverse current, drain current | VR = 600 V; TVJ = 150C | mA | 150 | ||
| CJ | junction capacitance | VR = 400 V; f = 1 MHz; TVJ = 25C | pF | 107 | ||
| RthJC | thermal resistance junction to case | K/W | 0.5 | |||
| RthCH | thermal resistance case to heatsink | K/W | 0.10 | |||
| trr | reverse recovery time | IF = 100 A; -dIF/dt = 100 A/s; TVJ = 100C | ns | 35 | ||
| IRM | max. reverse recovery current | IF = 100 A; -dIF/dt = 100 A/s; TVJ = 100C | A | 27 | ||
| TJ | virtual junction temperature | C | 150 | |||
| Tstg | storage temperature | C | -40 | 150 | ||
| IRMS | RMS current per terminal | A | 150 | |||
| Isolation Voltage | t = 1 second | V | 3000 | |||
| Mounting torque | Nm | 1.5 | ||||
| Terminal torque | Nm | 1.1 | ||||
| Weight | g | 30 |
2411220400_Littelfuse-IXYS-DSEI2X101-06A_C425669.pdf
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