200 mAmps 50 Volts N Channel Power MOSFET SC 88 Package LRC LBSS138DW1T1G for Electronic Applications

Key Attributes
Model Number: LBSS138DW1T1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.6Ω@2.75V,200mA
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
2 N-Channel
Input Capacitance(Ciss):
50pF@25V
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
-
Mfr. Part #:
LBSS138DW1T1G
Package:
SC-88
Product Description

Product Overview

The LBSS138DW1T1G and S-LBSS138DW1T1G are N-Channel Power MOSFETs designed for low voltage applications, featuring a low threshold voltage (VGS(th): 0.5V to 1.5V). The 'S-' prefix models are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with strict site and control change requirements. These devices are RoHS compliant and Halogen Free, ensuring environmental safety. They are available in the SC-88 (SOT-363) package.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Qualification: AEC-Q101 qualified (S- prefix models)
  • PPAP Capability: Yes (S- prefix models)
  • Package: SC-88 (SOT-363)

Technical Specifications

Model Description Marking Order Code Package Units Min Typ. Max
LBSS138DW1T1G Power MOSFET, 200 mAmps, 50 Volts, N-Channel J1 LBSS138DW1T1G SC88(SOT-363)
S-LBSS138DW1T1G Power MOSFET, 200 mAmps, 50 Volts, N-Channel (Automotive) J1 S-LBSS138DW1T1G SC88(SOT-363)
LBSS138DW1T3G Power MOSFET, 200 mAmps, 50 Volts, N-Channel LBSS138DW1T3G SC88(SOT-363)
Maximum Ratings (Ta = 25C)
Drain-Source Voltage (VDSS) Vdc 50
Gate-to-Source Voltage (VGS) - Continuous Vdc -20 +20
Drain Current (ID) - Continuous mAdc 200
Drain Current (IDM) - Pulsed (tp10s) mAmps 800
Thermal Characteristics
Total Device Dissipation (PD) - FR-5 Board (Note 1) @ TA = 25C mW 225
Derate above 25C mW/C 1.8
Thermal Resistance, Junction-to-Ambient (RJA) (Note 1) C/W 556
Junction and Storage Temperature (TJ, Tstg) C -55 +150
Maximum Lead Temperature for Soldering Purposes, for 10 seconds C 260
Electrical Characteristics (Ta= 25C, unless otherwise noted)
Characteristic Symbol Condition Unit Min Typ. Max
Drain-Source Breakdown Voltage VBRDSS VGS = 0, ID = 250Adc Vdc 50
Zero Gate Voltage Drain Current IDSS VGS = 0, VDS = 25 Vdc Adc 0.1
VGS = 0, VDS = 50 Vdc Adc 1.0
GateBody Leakage Current, Forward IGSSF VGS = 20 Vdc Adc 0.1
GateBody Leakage Current, Reverse IGSSR VGS = - 20 Vdc Adc -0.1
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1.0mAdc V 0.5 1.5
Static DrainSource OnState Resistance RDS(on) VGS = 2.75 Vdc, ID < 200 mAdc Ohms 5.6
VGS = 5.0 Vdc, ID = 200 mAdc Ohms 3.5
Forward Transconductance gfs VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz mS 100
Dynamic Characteristics
Input Capacitance Ciss VDS = 25 Vdc, VGS = 0, f = 1.0 MHz pF 40 50
Output Capacitance Coss VDS = 25 Vdc, VGS = 0, f = 1.0 MHz pF 12 25
Reverse Transfer Capacitance Crss VDS = 25 Vdc, VGS = 0, f = 1.0 MHz pF 3.5 5.0
Switching Characteristics
Turn-On Delay Time td(on) VDD = 30 Vdc , ID =200 mAdc ns 20
Turn-Off Delay Time td(off) VDD = 30 Vdc , ID =200 mAdc ns 20
Note 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Note 1: FR5 = 1.00.750.062 in.

Outline and Dimensions

Dimensions are in millimeters (inches).

Symbol Millimeters Inches
MIN NOM MAX MIN NOM MAX
A 1.15 1.25 1.35 0.045 0.049 0.053
A1 0 0.10 0 0.004
A2 0.65 BSC 0.026 BSC
b 0.15 0.20 0.25 0.006 0.008 0.010
c 0.06 0.10 0.003 0.004
D 2.00 2.10 2.20 0.078 0.082 0.086
E 1.80 0.071
E1 1.10 0.043
e 0.90 1.00 1.10 0.035 0.039 0.043
L 0.26 0.36 0.46 0.010 0.014 0.018
L2 0.15 0.22 0.006 0.009
aaa 0.15 BSC 0.006 BSC
bbb 0.30 0.012
ccc 0.10 0.004
ddd 0.10 0.004

Soldering Footprint

Dimensions are in millimeters.

0.10 0.15 0.20 0.25 0.30 1.10 2.00 2.20
0.00 X X X X X
0.01 X
0.043 X
0.078 X
0.086 X

2303042030_LRC-LBSS138DW1T1G_C525406.pdf

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