Audio amplifier driver stage transistor LRC LBTP180Y3T1G PNP medium power device for general electronic
Key Attributes
Model Number:
LBTP180Y3T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
550mW
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
LBTP180Y3T1G
Package:
SOT-89
Product Description
Product Overview
The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, with the S-prefix variant meeting AEC-Q101 qualification and PPAP capability for automotive applications. These devices comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
Technical Specifications
| Parameter | Symbol | Limits | Unit | Notes |
| Peak base current | IBM | -200 | mA | |
| CollectorBase Voltage | VCBO | -100 | V | |
| CollectorEmitter Voltage | VCEO | -80 | V | |
| EmitterBase Voltage | VEBO | -5 | V | |
| Collector Current(DC) | IC | -1 | A | |
| Peak collector current | ICM | -1.5 | A | |
| Total Device Dissipation, FR4 Board | PD | 550 | mW | @ TA = 25C |
| Derate above 25C | 225 | mW/C | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 4.4 | C/W | |
| Thermal Resistance, JunctiontoCase | RJC | 50 | C/W | |
| Junction and Storage temperature | TJ,Tstg | -65+150 | C | |
| Collector Cutoff Current | ICBO | -100 | nA | (VCB = -30 V,IE = 0) |
| Collector Cutoff Current | ICBO | -250 | nA | (VCB = -30 V,IE = 0,Tj = 125 C) |
| Emitter Cut-off Current | IEBO | -100 | nA | (VEB =-5V, IC =0) |
| DC Current Gain | HFE | 40 | - | (VCE =-2V, IC =-5mA) |
| DC Current Gain | HFE | - | - | (VCE =-2V, IC =-150mA) |
| DC Current Gain | HFE | - | - | (VCE =-2V, IC =-500mA) |
| CollectorEmitter Saturation Voltage | VCE(sat) | -500 | mV | (IC = 500 mA, IB = 50 mA) |
| Base-emitter voltage | VBE | -1 | V | (IC = 500 mA,VCE = 2 V) |
| Transition Frequency | fT | 50 | MHz | (IC = 10 mA,VCE = 5 V,f = 100 MHz) |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -80 | V | (IC = -1 mA, IB = 0) |
| CollectorBase Breakdown Voltage | VBR(CBO) | -100 | V | (IC = -100 A, IE = 0) |
| EmitterBase Breakdown Voltage | VBR(EBO) | -5 | V | (IE = -100 A, IC = 0) |
| Collector-Emitter cutoff Current | ICEO | -10 | A | (VCE= -80V,IB=0) |
2410010403_LRC-LBTP180Y3T1G_C2986742.pdf
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