Low RDSon P Channel MOSFET LP4435T1G 30V Trench Technology Designed for Load Switches and Motor Drives
Key Attributes
Model Number:
LP4435T1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9.5A
RDS(on):
37mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
151pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.539nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
19nC@4.5V
Mfr. Part #:
LP4435T1G
Package:
SOP-8
Product Description
Product Overview
The LP4435T1G is a P-Channel 30V (D-S) MOSFET featuring low RDS(on) achieved through trench technology, low thermal impedance, and fast switching speeds. It is designed for applications such as load switches, DC/DC conversion, and motor drives. This device is manufactured by Leshan Radio Company, LTD.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Model: LP4435T1G
- Marking: LP4435
- Technology: Trench
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -9.5 | A | ||
| Continuous Drain Current | ID | TA=70°C | -7 | A | ||
| Pulsed Drain Current | IDM | -38 | A | |||
| Continuous Source Current (Diode Conduction) | IS | TA=25°C | -3.1 | A | ||
| Continuous Source Current (Diode Conduction) | IS | TA=70°C | -2.2 | A | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| Power Dissipation | PD | a | 1.6 | W | ||
| ELECTRICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED) | ||||||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = -250 µA | -1 | V | ||
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = ±20 V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24 V, VGS = 0 V | -1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -24 V, VGS = 0 V, TJ = 55°C | -10 | µA | ||
| On-State Drain Current | ID(on) | VDS = -5 V, VGS = -10 V | -20 | A | ||
| Drain-Source On-Resistance | rDS(on) | VGS = -10 V, ID = -7 A | 24 | mΩ | ||
| Drain-Source On-Resistance | rDS(on) | VGS = -4.5 V, ID = -5 A | 37 | mΩ | ||
| Forward Transconductance | gfs | VDS = -15 V, ID = -7 A | 8 | S | ||
| Diode Forward Voltage | VSD | IS = -1 A, VGS = 0 V | -1.5 | V | ||
| Total Gate Charge | Qg | VDS = -15 V, RL = 2.1 Ω, ID = -7 A, VGEN = -10 V, RGEN = 6 Ω | 19 | nC | ||
| Gate-Source Charge | Qgs | 4.7 | nC | |||
| Gate-Drain Charge | Qgd | 8.4 | nC | |||
| Turn-On Delay Time | td(on) | 6 | ns | |||
| Rise Time | tr | 5 | ns | |||
| Turn-Off Delay Time | td(off) | 55 | ns | |||
| Fall Time | tf | 21 | ns | |||
| Input Capacitance | Ciss | VDS = -15 V, VGS = 0 V, f = 1 MHz | 1539 | pF | ||
| Output Capacitance | Coss | 163 | pF | |||
| Reverse Transfer Capacitance | Crrs | 151 | pF | |||
| THERMAL RESISTANCE RATINGS | ||||||
| Maximum Junction-to-Ambient | RθJA | a | 40 | °C/W | ||
| Maximum Junction-to-Ambient | RθJA | b | 80 | °C/W | ||
2111031830_LRC-LP4435T1G_C2912043.pdf
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