High Voltage PNP Transistor LRC L2SA812SLT1G with 60 Volt Collector Base Voltage and PPAP Capability
Key Attributes
Model Number:
L2SA812SLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
180MHz
Type:
PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L2SA812SLT1G
Package:
SOT-23
Product Description
Product Overview
The L2SA812SLT1G and S-L2SA812SLT1G are general-purpose PNP silicon transistors designed for various applications. They feature a high voltage rating of VCEO = -50 V and an epitaxial planar construction. These devices are RoHS compliant and Halogen Free. The S-prefix variants are qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and PPAP capabilities.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Silicon
- Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
- Compliance: RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | L2SA812SLT1G | S-L2SA812SLT1G | Unit |
|---|---|---|---|---|
| MAXIMUM RATINGS | ||||
| EmitterBase Voltage | VEBO | -6 | V | |
| Collector Current Continuous | IC | -150 | mA | |
| CollectorEmitter Voltage | VCEO | -50 | V | |
| CollectorBase Voltage | VCBO | -60 | V | |
| Total Device Dissipation, FR5 Board @ TA = 25C | PD | 200 | mW | |
| Derate above 25C | 1.8 | mW/C | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 556 | C/W | |
| Junction and Storage temperature | TJ,Tstg | 55+150 | C | |
| ELECTRICAL CHARACTERISTICS | ||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -50 | V | |
| CollectorBase Breakdown Voltage | VBR(CBO) | -60 | V | |
| EmitterBase Breakdown Voltage | VBR(EBO) | -6 | V | |
| Collector-Base cut-off current | ICBO | -0.1 | A | |
| Emitter-Base cut-off current | IEBO | -0.1 | A | |
| CollectorEmitter cutoff Current | ICEO | -10 | A | |
| DC Current Gain | HFE | 270 | 560 | |
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.18 to -0.3 | V | |
| Base Emitter On Voltage | VBE | -0.58 to -0.68 | V | |
| CurrentGain Bandwidth Product | fT | 180 | MHz | |
| Output Capacitance | Cobo | 4.5 | pF | |
| DEVICE MARKING AND ORDERING INFORMATION | ||||
| Device Marking | M7 | M7 | ||
| Shipping | 3000/Tape&Reel | 10000/Tape&Reel | ||
| Package | SOT23(TO-236) | SOT23(TO-236) | ||
2212131909_LRC-L2SA812SLT1G_C5273094.pdf
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