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quality Littelfuse IXYS DPG20C200PB Fast Recovery Diode Featuring Low Loss and Soft Recovery Characteristics factory
quality Littelfuse IXYS DPG20C200PB Fast Recovery Diode Featuring Low Loss and Soft Recovery Characteristics factory

Littelfuse IXYS DPG20C200PB Fast Recovery Diode Featuring Low Loss and Soft Recovery Characteristics

Key Attributes
Model Number: DPG20C200PB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
140A
Reverse Leakage Current (Ir):
1uA@200V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max):
200V
Pd - Power Dissipation:
65W
Voltage - Forward(Vf@If):
1.45V@20A
Current - Rectified:
10A
Mfr. Part #:
DPG20C200PB
Package:
TO-220
Product Description

Product Overview

The DPG20C200PB is a high-performance Fast Recovery Diode with common cathode configuration, featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior with very low Irm-values. Its soft reverse recovery minimizes EMI/RFI, and the avalanche voltage rating ensures reliable operation. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and freewheeling diode in applications such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: TO-220
  • Compliance: RoHS compliant
  • Material: Epoxy meets UL 94V-0
  • Product Marking: DPG20C200PB

Technical Specifications

Symbol Definition Conditions Unit typ. max. min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 200
VRMS RMS current per terminal A 35
IF(AV) average forward current TC = 25C A 20
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 200
Ptot total power dissipation TC = 25C W 65
VF forward voltage drop IF = 20 A; TVJ = 25C V 0.98 1.17
VF0 threshold voltage V 0.74
rF slope resistance for power loss calculation only m 17.7
IR reverse current, drain current VR = 200 V; TVJ = 25C A 150
IR reverse current, drain current VR = 200 V; TVJ = 125C mA 0.06
RthJC thermal resistance junction to case K/W 0.50
RthCH thermal resistance case to heatsink K/W 1.0
TVJ virtual junction temperature C 175 -55
Tstg storage temperature C 150 -55
trr reverse recovery time IF = 1 A; -diF/dt = 20 A/s; VR = 130 V; TVJ = 125C ns 35
IRM max. reverse recovery current IF = 1 A; -diF/dt = 20 A/s; VR = 130 V; TVJ = 125C A 3
Qr reverse recovery charge IF = 10 A; -diF/dt = 20 A/s; VR = 130 V; TVJ = 125C C 5.5
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 200
CJ junction capacitance VR = 150 V; TVJ = 25C; f = 1 MHz pF 150
Weight g 0.4
Mounting torque Nm 0.6
Mounting force with clip N 60
Dimensions (Millimeter) Min. Max.
A 4.32 4.82
A1 1.14 1.39
A2 2.29 2.79
b 0.64 1.01
b2 1.15 1.65
C 0.35 0.56
D 14.73 16.00
E 9.91 10.66
e 2.54 BSC 0.100 BSC
H1 5.85 6.85
L 12.70 13.97
L1 2.79 5.84
P 3.54 4.08
Q 2.54 3.18

2410121742_Littelfuse-IXYS-DPG20C200PB_C440799.pdf

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