Automotive PNP Silicon Driver Transistor S-LMBTA56LT1G with RoHS Halogen Free and AEC Q101 Compliance
Key Attributes
Model Number:
S-LMBTA56LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
50MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LMBTA56LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBTA56LT1G and S-LMBTA56LT1G are PNP Silicon Driver Transistors designed for automotive and general applications. The 'S-' prefix denotes compliance with unique site and control change requirements, AEC-Q101 qualification, and PPAP capability. These devices are RoHS and Halogen Free compliant.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Silicon
- Certifications: RoHS, Halogen Free, AEC-Q101 (for S- prefix)
- Device Marking: 2GM
Technical Specifications
| Parameter | Symbol | LMBTA56LT1G | S-LMBTA56LT1G | Unit | Notes |
| CollectorEmitter Voltage | VCEO | -80 | -80 | V | |
| CollectorBase Voltage | VCBO | -80 | -80 | V | |
| EmitterBase Voltage | VEBO | -4 | -4 | V | |
| Collector Current Continuous | IC | -500 | -500 | mA | |
| Total Device Dissipation, FR5 Board | PD | 1.8 | 1.8 | mW | @ TA = 25C |
| Derate above 25C | 556 | 556 | mW/C | ||
| JunctiontoAmbient Thermal Resistance | RJA | 225 | 225 | C/W | FR5 = 1.00.750.062 in. |
| Junction and Storage temperature | TJ,Tstg | -55+150 | -55+150 | C | |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -80 | -80 | V | IC = -1 mA, IB = 0 |
| EmitterBase Breakdown Voltage | VBR(EBO) | -4 | -4 | V | IE = -100 A, IC = 0 |
| CollectorBase Breakdown Voltage | VBR(CBO) | -80 | -80 | V | IC= -100A, IE= 0 |
| Collector Cutoff Current | ICES | -0.1 | -0.1 | A | VCE = - 60 V, IE = 0 |
| Collector Cutoff Current | ICEO | -10 | -10 | A | VCE-80V, IB=0 |
| Emitter-Base cut-off current | IEBO | -100 | -100 | nA | IC = 0, VEB = -6V |
| DC Current Gain | HFE | 100 | 100 | IC = -10 mA, VCE = -1 V | |
| DC Current Gain | HFE | 100 | 100 | IC = -100 mA, VCE = -1 V | |
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.25 | -0.25 | V | IC = -100 mA, IB = -10 mA |
| Base-Emitter turn on voltage | VBE(on) | -1.2 | -1.2 | V | IC = -100 mA, VCE = -1 V |
| CurrentGain Bandwidth Product | fT | 50 | 50 | MHz | IC = -100mA, VCE= -1V, f = 100MHz |
| Output Capacitance | Cobo | 5.3 | 5.3 | pF | VCB=10V,IE=0,f=1MHz |
| Input Capacitance | Cibo | 78 | 78 | pF | VEB=0.5V,IC=0,f=1MHz |
2201121630_LRC-S-LMBTA56LT1G_C2932865.pdf
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