Littelfuse IXYS DSEI60-06A Fast Recovery Diode with Low Leakage Current and Improved Thermal Behavior
Key Attributes
Model Number:
DSEI60-06A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
550A
Reverse Leakage Current (Ir):
20uA@600V
Reverse Recovery Time (trr):
100ns
Operating Junction Temperature Range:
-40℃~+125℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.75V@60A
Current - Rectified:
60A
Mfr. Part #:
DSEI60-06A
Package:
TO-247-2
Product Description
Product Overview
The DSEI60-06A is a Fast Recovery Epitaxial Diode (FRED) featuring planar passivated chips, low leakage current, and very short recovery times. It offers improved thermal behavior and very soft recovery characteristics, making it suitable for applications requiring reduced EMI/RFI. Its avalanche voltage rating ensures reliable operation. Key advantages include low Irm-values, which reduce power dissipation within the diode and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, an antisaturation diode, a snubber diode, and a free-wheeling diode. It is also used in rectifiers for switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Package: TO-247
- Certifications: RoHS compliant; Epoxy meets UL 94V-0
- Data Standard: IEC 60747
Technical Specifications
| Symbol | Definition | Conditions | Unit | typ. | max. | min. |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | V | 600 | ||
| VRSM | max. non-repetitive reverse blocking voltage | TVJ = 25C | V | 600 | ||
| IF(AV) | average forward current | TC = 25C | A | 60 | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | A | 600 | ||
| Ptot | total power dissipation | TC = 25C | W | 250 | ||
| VF | forward voltage drop | IF = 120 A; TVJ = 25C | V | 1.75 | 2.02 | |
| VF0 | threshold voltage | TVJ = 150C | V | 1.16 | ||
| rF | slope resistance for power loss calculation only | IF = 120 A; TVJ = 150C | m | 5.8 | ||
| RthJC | thermal resistance junction to case | K/W | 0.25 | |||
| RthCH | thermal resistance case to heatsink | K/W | 0.5 | |||
| TVJ | virtual junction temperature | C | 150 | |||
| Tstg | storage temperature | C | -40 | 150 | ||
| IRMS | RMS current per terminal | A | 125 | |||
| VF | forward voltage drop | IF = 60 A; TVJ = 150C | V | 1.50 | 1.87 | |
| VF | forward voltage drop | IF = 60 A; TVJ = 25C | V | 1.16 | 1.50 | |
| IR | reverse current, drain current | VR = 600 V; TVJ = 25C | A | 150 | ||
| CJ | junction capacitance | VR = 600 V; f = 1 MHz; TVJ = 25C | pF | 49 | ||
| trr | reverse recovery time | IF = 60 A; -dIF/dt = 400 A/s; VR = 350 V; TVJ = 100C | ns | 35 | ||
| IRM max. | reverse recovery current | IF = 60 A; -dIF/dt = 400 A/s; VR = 350 V; TVJ = 100C | A | 16 | ||
| Qr | reverse recovery charge | IF = 60 A; -dIF/dt = 400 A/s; VR = 350 V; TVJ = 100C | C | 100 | ||
| Mounting torque | Nm | 1.2 | 0.8 | |||
| Mounting force with clip | N | 120 | 20 | |||
| Weight | g | 6 |
Dimensions (TO-247):
| Sym. | Inches | Millimeter | ||
|---|---|---|---|---|
| min. | max. | min. | max. | |
| A | 0.185 | 0.209 | 4.70 | 5.30 |
| A1 | 0.087 | 0.102 | 2.21 | 2.59 |
| A2 | 0.059 | 0.098 | 1.50 | 2.49 |
| D | 0.819 | 0.845 | 20.79 | 21.45 |
| E | 0.610 | 0.640 | 15.48 | 16.24 |
| E2 | 0.170 | 0.216 | 4.31 | 5.48 |
| e | 0.430 BSC | 10.92 BSC | ||
| L | 0.780 | 0.800 | 19.80 | 20.30 |
| L1 | - | 0.177 | - | 4.49 |
| P | 0.140 | 0.144 | 3.55 | 3.65 |
| Q | 0.212 | 0.244 | 5.38 | 6.19 |
| S | 0.242 BSC | 6.14 BSC | ||
| b | 0.039 | 0.055 | 0.99 | 1.40 |
| b2 | 0.065 | 0.094 | 1.65 | 2.39 |
| b4 | 0.102 | 0.135 | 2.59 | 3.43 |
| c | 0.015 | 0.035 | 0.38 | 0.89 |
| D1 | 0.515 | - | 13.07 | - |
| D2 | 0.020 | 0.053 | 0.51 | 1.35 |
| E1 | 0.530 | - | 13.45 | - |
| P1 | - | 0.29 | - | 7.39 |
2410121916_Littelfuse-IXYS-DSEI60-06A_C426674.pdf
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