General purpose transistor LRC L2SC1623SLT1G with 50V collector emitter voltage and SOT23 package
Key Attributes
Model Number:
L2SC1623SLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L2SC1623SLT1G
Package:
SOT-23
Product Description
Product Overview
The L2SC1623Q/R/S series are general-purpose transistors designed for various electronic applications. These devices offer reliable performance and are available in different configurations to suit specific needs.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Series: L2SC1623Q/R/S
- Package: SOT-23
- Certifications: AEC-Q101 Qualified (S-Prefix for Automotive)
- Compliance: Pb-Free package available
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| VCEO | Collector-Emitter Voltage | 50 | V | |||
| VCBO | Collector-Base Voltage | 60 | V | |||
| VEBO | Emitter-Base Voltage | 7 | V | |||
| IC | Collector Current-Continuous | 150 | mAdc | |||
| PD | Total Device Dissipation (FR-5 Board) | TA=25C | 225 | mW | ||
| RJA | Thermal Resistance, Junction to Ambient (FR-5 Board) | 556 | C/W | |||
| PD | Total Device Dissipation (Alumina Substrate) | TA=25C | 300 | mW | ||
| RJA | Thermal Resistance, Junction to Ambient (Alumina Substrate) | 417 | C/W | |||
| Tj, Tstg | Junction and Storage Temperature | -55 | +150 | C | ||
| ICBO | Collector Cutoff Current | VCB=60V | 0.1 | A | ||
| IEBO | Emitter Cutoff Current | VEB=5V | 0.1 | A | ||
| hFE | DC Current Gain | IC=1.0mA, VCE=6V (Q) | 120 | 270 | ||
| IC=1.0mA, VCE=6V (R) | 180 | 390 | ||||
| IC=1.0mA, VCE=6V (S) | 270 | 560 | ||||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=100mA, IB=10mA | 0.15 | 0.3 | V | |
| VBE(sat) | Base-Emitter Saturation Voltage | IC=100mA, IB=10mA | 0.86 | 1.0 | V | |
| VBE | Base-Emitter On Voltage | IC=1mA, VCE=6.0V | 0.55 | 0.62 | 0.65 | V |
| Ft | Current-Gain-Bandwidth Product | VCE=6.0V, IE =-10mA | 250 | MHz | ||
| Cob | Output Capacitance | VCE = 6V, IE=0, f=1.0MHz | 3 | pF |
2404091718_LRC-L2SC1623SLT1G_C383167.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
