P Channel Enhancement Mode MOSFET LRC LP4101LT1G with RoHS Compliance and Small Surface Mount Package
Key Attributes
Model Number:
LP4101LT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
950mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
97.26pF@6V
Number:
1 P-Channel
Input Capacitance(Ciss):
882.51pF@6V
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
15.23nC@4.5V
Mfr. Part #:
LP4101LT1G
Package:
SOT-23
Product Description
Product Overview
The S-LP4101LT1G is a P-Channel Enhancement-Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. This device offers fully characterized avalanche voltage and current, along with improved Shoot-Through FOM. It is suitable for applications requiring unique site and control change requirements, being AEC-Q101 Qualified and PPAP Capable. The MOSFET is available in a small SOT-23 (TO-236AB) surface mount package.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT 23 (TO236AB)
- Material Compliance: RoHS requirements
- Qualification: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | -2.3 | A | |||
| Pulsed Drain Current | IDM | (1) | -8 | A | ||
| Maximum Power Dissipation | PD | TA = 25C | 0.9 | W | ||
| TA = 75C | 0.57 | W | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted)(2) | RqJA | 140 | C/W | |||
| Junction-to-Case Thermal Resistance | RqJC | 20 | C/W | |||
| Electrical Characteristics (TA = 25C unless otherwise noted) | ||||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = -250uA | -20 | V | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5V, ID = -2.8A | 100 | m | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -2.5V, ID = -2.0A | 150 | m | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID = -250uA | -0.45 | -0.95 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -9.6V, VGS = 0V | -1 | uA | ||
| Gate Body Leakage | IGSS | VGS = 8V, VDS = 0V | 100 | nA | ||
| Forward Transconductance | gfs | VDS = -5V, ID = -4.0A | 6.5 | S | ||
| Dynamic (3) | ||||||
| Total Gate Charge | Qg | VDS = -6V, ID = -2.8A, VGS = -4.5V | 15.23 | nC | ||
| Gate-Source Charge | Qgs | 5.49 | nC | |||
| Gate-Drain Charge | Qgd | 2.74 | nC | |||
| Turn-On Delay Time | td(on) | VDD = -6V, RL = 6, ID = 1, VGEN = -4.5V, RG = 6 | 17.28 | ns | ||
| Turn-On Rise Time | tr | 3.73 | ns | |||
| Turn-Off Delay Time | td(off) | 36.05 | ns | |||
| Turn-Off Fall Time | tf | 6.19 | ns | |||
| Input Capacitance | Ciss | VDS = -6V, VGS = 0V, f = 1.0 MHz | 882.51 | pF | ||
| Output Capacitance | Coss | 145.54 | pF | |||
| Reverse Transfer Capacitance | Crss | 97.26 | pF | |||
| Source-Drain Diode | ||||||
| Max. Diode Forward Current | IS | -2.4 | A | |||
| Diode Forward Voltage | VSD | IS = -0.75A, VGS = 0V | -0.8 | -1.2 | V | |
| Models & Ordering Information | ||||||
| Model | Device Marking | Shipping | ||||
| LP4101LT1G | S-LP4101LT1G | P41 | 3000/Tape & Reel | |||
| LP4101LT3G | S-LP4101LT3G | P41 | 10,000/Tape & Reel | |||
| Dimensions (SOT-23) | ||||||
| Dimension | Symbol | Unit | Min | Max | Min | Max |
| A | mm | 2.80 | 3.04 | 0.1102 | 0.1197 | |
| B | mm | 1.20 | 1.40 | 0.0472 | 0.0551 | |
| C | mm | 0.89 | 1.11 | 0.0350 | 0.0440 | |
| D | mm | 0.37 | 0.50 | 0.0150 | 0.0200 | |
| G | mm | 1.78 | 2.04 | 0.0701 | 0.0807 | |
| H | mm | 0.013 | 0.100 | 0.0005 | 0.0040 | |
| J | mm | 0.085 | 0.177 | 0.0034 | 0.0070 | |
| K | mm | 0.35 | 0.69 | 0.0140 | 0.0285 | |
| L | mm | 0.89 | 1.02 | 0.0350 | 0.0401 | |
| S | mm | 2.10 | 2.64 | 0.0830 | 0.1039 | |
| V | mm | 0.45 | 0.60 | 0.0177 | 0.0236 | |
2011072004_LRC-LP4101LT1G_C383255.pdf
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