load switch component LRC LP7411DT1WG 60V P Channel MOSFET with trench technology and RoHS compliance
Key Attributes
Model Number:
LP7411DT1WG
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
15A
RDS(on):
9.8mΩ@10V,9A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
321pF@30V
Number:
1 P-Channel
Pd - Power Dissipation:
3.2W
Input Capacitance(Ciss):
7.044nF@30V
Gate Charge(Qg):
66nC@30V
Mfr. Part #:
LP7411DT1WG
Package:
DFN5060-8B
Product Description
Product Overview
The LP7411DT1WG is a 60V P-Channel (D-S) MOSFET designed for various power management applications. It features low RDS(on) with trench technology, low thermal impedance, and fast switching speed, making it suitable for load switches, DC/DC conversion, and motor drives. This device complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | |
| Gate-Source Voltage | VGS | -80 | V | |
| Power Dissipation (TA = 25) | PD | 5 | W | (Note1) |
| Power Dissipation (TA = 70) | PD | 20 | W | (Note1) |
| Continuous Drain Current (TA = 25) | ID | -20 | A | (Note1) |
| Continuous Drain Current (TA = 70) | ID | -15 | A | (Note1) |
| Pulsed Drain Current | IDM | -20 | A | (Note2) |
| Avalanche Current (L=0.1mH) | IAS | 49 | A | |
| Avalanche energy (L=0.1mH) | EAS | 120.05 | mJ | |
| Maximum Junction-to-Ambient (Steady State) | RJA | 65 | /W | (Note1) |
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55~+150 | ||
| Gate Threshold Voltage (VDS =VGS , ID =-250A) | VGS(th) | -1 | V | (VGS = 0, ID = -250A) |
| Gate Leakage Current (VDS =0V, VGS =20V) | IGSS | 100 | nA | |
| Zero Gate Voltage Drain Current (VDS = -48 V, VGS = 0 V) | IDSS | -250 | A | |
| Drain-Source On-Resistance (VGS = -10 V, ID = -9 A) | RDS(ON) | 17 | m | (Note 3) |
| Drain-Source On-Resistance (VGS = -4.5 V, ID = -8 A) | RDS(ON) | 26 | m | (Note 3) |
| Diode Forward Voltage (IS = -3.6 A, VGS = 0 V) | VSD | -0.72 | V | (Note 3) |
| Total Gate Charge | Qg | 255 | nC | (VDS=- 30V,VGS=- 4.5V,ID=-9A) (Note 4) |
| Gate-Source Charge | Qgs | 90 | nC | (Note 4) |
| Gate-Drain Charge | Qgd | 70 | nC | (Note 4) |
| Turn-On Delay Time | td(on) | 15 | ns | (VDS = -30 V, RL = 3.3 ,ID = -9 A,VGEN = -10 V, RGEN = 6 ) (Note 4) |
| Rise Time | tr | 21 | ns | (Note 4) |
| Turn-Off Delay Time | td(off) | 382 | ns | (Note 4) |
| Fall Time | tf | 321 | ns | (Note 4) |
| Input Capacitance | Ciss | 7044 | pF | (VDS = -30 V, VGS = 0 V, f = 1 MHz) (Note 4) |
| Output Capacitance | Coss | 1000 | pF | (f=1.0MHz, Ta=25) |
| Reverse Transfer Capacitance | Crss | 1000 | pF | (f=1.0MHz, Ta=25) |
| DrainSource Breakdown Voltage | VBRDSS | -60 | V |
Device Marking and Ordering Information
| Model | Voltage | Channel Type | Package | Device Marking | Shipping |
|---|---|---|---|---|---|
| LP7411DT1WG | 60V | P-Channel (D-S) | DFN5060-8B | LP7411 | 3000/Tape&Reel |
Package Information
| Package Type | Dimensions (mm) |
|---|---|
| DFN5060-8B | A: 0.90-1.10, A1: 0.00-0.05, E: 6.00-6.30, E1: 5.66-5.86, E2: 3.40-3.60, D: 4.95-5.25, D1: 4.80-5.00, D2: 3.76-3.96, b: 0.30-0.40, B: 0.36-0.46, L: 0.56-0.76, e: 1.27BSC, c: 0.254REF. |
2211080930_LRC-LP7411DT1WG_C5201713.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
