Low loss fast recovery diode Littelfuse IXYS DSEP30-12A designed for UPS and switch mode power supply

Key Attributes
Model Number: DSEP30-12A
Product Custom Attributes
Reverse Leakage Current (Ir):
250uA@1.2kV
Reverse Recovery Time (trr):
60ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
3.27V@60A
Current - Rectified:
30A
Mfr. Part #:
DSEP30-12A
Package:
TO-247-2
Product Description

Product Overview

The DSEP30-12A is a high-performance fast recovery diode featuring low loss and soft recovery characteristics. It is designed with planar passivated chips, offering very low leakage current, very short recovery time, and improved thermal behavior. Its very low Irm-values and soft reverse recovery contribute to reduced power dissipation and lower turn-on losses in commutating switches, making it ideal for applications requiring low EMI/RFI. This diode is suitable as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode, as well as in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Compliance: RoHS compliant
  • Epoxy Material: Meets UL 94V-0
  • Package Type: TO-247 (Industry standard outline)

Technical Specifications

Part Number VRRM (V) IF (A) VF (V) trr (ns) IRM (A) RthJC (K/W) Ptot (W) VJ (V) Tj (C) Tstg (C) Weight (g)
DSEP30-12A 1200 30 1.12 (typ.) 170 (typ.) 13.4 (typ.) 0.9 (typ.) 165 (typ.) 1200 175 -55 to 175 ~ 4.7
DSEP30-12A 1200 60 1.79 (typ.) 8.5 (typ.) 13.4 (typ.) 0.9 (typ.) 165 (typ.) 1200 175 -55 to 175 ~ 4.7
DSEP30-12A 1200 60 2.30 (typ.) 8.5 (typ.) 13.4 (typ.) 0.9 (typ.) 165 (typ.) 1200 175 -55 to 175 ~ 4.7
DSEP30-12AR 1200 - - - - - - 1200 175 -55 to 175 ~ 4.7
DSEP30-12CR 1200 - - - - - - 1200 175 -55 to 175 ~ 4.7
Symbol Definition Conditions Unit typ. max. min.
VRRM max. repetitive reverse blocking voltage Tj = 25C V 1200
VRMSM max. non-repetitive reverse blocking voltage Tj = 25C V 1200
VRSM max. non-repetitive reverse blocking voltage Tj = 25C V 1200
IF (AV) average forward current Tj = 175C A 30
IF (RMS) RMS current per terminal A 70
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; Tj = 45C A 200
VF forward voltage drop IF = 30 A, Tj = 175C V 1.12
VF forward voltage drop IF = 60 A, Tj = 175C V 1.79
VF forward voltage drop IF = 60 A, Tj = 175C V 2.30
I R reverse current, drain current VR = 1200 V, Tj = 175C A 150
CJ junction capacitance VR = 600 V, f = 1 MHz pF 120
Ptot total power dissipation Tj = 25C W 165
RthJC thermal resistance junction to case K/W 0.9
RthCH thermal resistance case to heatsink K/W 0.25
V F0 threshold voltage V 1.12
rF slope resistance for power loss calculation only m 16
Dimensions (Inches) Dimensions (Millimeter)
min. max. min. max.
0.185 0.209 4.70 5.30
0.087 0.102 2.21 2.59
0.059 0.098 1.50 2.49
0.819 0.845 20.79 21.45
0.610 0.640 15.48 16.24
0.170 0.216 4.31 5.48
- 10.92 BSC - 10.92 BSC
0.780 0.800 19.80 20.30
- 0.177 - 4.49
0.140 0.144 3.55 3.65
0.212 0.244 5.38 6.19
- 6.14 BSC - 6.14 BSC
0.039 0.055 0.99 1.40
0.065 0.094 1.65 2.39
0.102 0.135 2.59 3.43
0.015 0.035 0.38 0.89
0.515 - 13.07 -
0.020 0.053 0.51 1.35
0.530 - 13.45 -
- 0.29 - 7.39

2410121924_Littelfuse-IXYS-DSEP30-12A_C130474.pdf

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