S LMBTA42LT1G automotive grade high voltage transistor with RoHS compliance AEC Q101 and Halogen Free
Key Attributes
Model Number:
S-LMBTA42LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
50MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LMBTA42LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBTA42LT1G and S-LMBTA42LT1G are high-voltage transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These devices are compliant with RoHS requirements and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Certifications: RoHS, Halogen Free, AEC-Q101 (S-prefix only), PPAP capable (S-prefix only)
- Material Compliance: RoHS requirements, Halogen Free
- Package: SOT23 (TO-236)
Technical Specifications
| Parameter | Symbol | LMBTA42LT1G | S-LMBTA42LT1G | Unit | Notes | |
| MAXIMUM RATINGS | ||||||
| Total Device Dissipation, FR5 Board | PD | 225 | - | mW | @ TA = 25C, Derate above 25C 2.4 mW/ | |
| Total Device Dissipation, Alumina Substrate | PD | 300 | - | mW | @ TA = 25C, Derate above 25C 1.8 mW/ | |
| CollectorBase Voltage | VCBO | 300 | - | V | - | |
| CollectorEmitter Voltage | VCEO | 300 | - | V | - | |
| EmitterBase Voltage | VEBO | 6 | - | V | - | |
| Collector Current | IC | 500 | - | mA | - | |
| Junction and Storage temperature | TJ,Tstg | -55+150 | - | - | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 300 | - | V | (IC = 1.0 mA, IB = 0) | |
| CollectorBase Breakdown Voltage | VBR(CBO) | 300 | - | V | (IC = 100 A, IE = 0) | |
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 | - | V | (IE = 100 A, IC = 0) | |
| Collector Cutoff Current | ICBO | - | 0.1 | A | (VCB = 200V, IE = 0) | |
| Emitter Cutoff Current | IEBO | - | 0.1 | A | (VEB = 6.0 V, IC = 0) | |
| DC Current Gain | HFE | 40 - 40 | - | - | (IC = 1.0 mA, VCE = 10 V) | |
| DC Current Gain | HFE | 25 - 50 | - | - | (IC = 10 mA, VCE = 10 V) | |
| DC Current Gain | HFE | - - 40 | - | - | (IC = 30 mA, VCE = 10 V) | |
| CollectorEmitter Saturation Voltage | VCE(sat) | - - 0.5 | - | V | (IC = 20 mA, IB = 2.0 mA) | |
| Base-emitter Saturation Voltage | VBE(sat) | - - 0.9 | - | V | (IC = 20 mA, IB = 2.0 mA) | |
| Transition frequency | fT | - - 300 | - | MHz | (VCE = 20 V, IC = 10mA, f = 100 MHz) | |
| Collector Base Capacitance | Ccb | - - 4 | - | pF | (VCB = 20 V, IE = 0, f = 1.0 MHz) | |
| DEVICE MARKING AND RESISTOR VALUES | ||||||
| Device Marking | - | LMBTA42LT1G 1D | S-LMBTA42LT1G 1D | - | - | |
| Shipping | - | 3000/Tape&Reel | 10000/Tape&Reel | - | - | |
2410010200_LRC-S-LMBTA42LT1G_C5336147.pdf
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