Surface Mount Power MOSFET LRC LDN2367T1G Lead Free Device for Load Switching and Power Management

Key Attributes
Model Number: LDN2367T1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.3A
RDS(on):
25mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF@10V
Number:
2 N-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
900pF@10V
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
LDN2367T1G
Package:
SOT-23-6
Product Description

Product Overview

The LDN2367T1G and S-LDN2367T1G are N-Channel Enhancement Mode Power MOSFETs designed for applications requiring high power and current handling capability. These devices are RoHS compliant and Halogen Free, with the S- prefix variant qualified for automotive and other demanding applications (AEC-Q101 qualified and PPAP capable). They are suitable for battery protection, load switching, and power management functionalities, offering lead-free and surface-mount package options.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Product Type: Lead free product
  • Package Type: Surface mount package (SOT26/TSOP-6)
  • Variant: S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

Technical Specifications

Device Marking and Ordering Information
Device Marking Shipping Units
LDN2367T1G LDN2367T1G 3000/Tape&Reel
S-LDN2367T1G S-LDN2367T1G 3000/Tape&Reel
LDN2367T3G LDN2367T3G 10000/Tape&Reel
Absolute Maximum Ratings (TA =25 unless otherwise noted)
Parameter Symbol Limits Unit
DrainSource Voltage VDS 20 V
GateSource Voltage VGS 12 V
Drain Current-Continuous ID 6.3 A
Drain Current-Pulsed (Note1) IDM 25 A
Maximum Power Dissipation PD 1.5 W
Operating Junction and Storage Temperature Range TJ ,TSTG -55 ~ +150
Thermal Characteristics (Note 2)
Parameter Symbol Limits Unit
Thermal Resistance, Junction-to-Ambient RJA 83 /W
Electrical Characteristics (Ta= 25C)
Parameter Symbol Min. Typ. Max. Unit
Off Characteristics
Drain-Source Breakdown Voltage (VGS =0V ID =250A) BVDSS 20 - - V
Zero Gate Voltage Drain Current (VDS =20V,VGS =0V) IDSS - 1 10 A
Gate-Body Leakage Current (VGS =12V,VDS =0V) IGSS - - 100 nA
On Characteristics (Note 3)
Gate Threshold Voltage (VDS =V GS ,ID =250A) VGS(th) 0.5 0.7 1.2 V
Drain-Source On-State Resistance (VGS =4.5V, ID =4.5A) RDS(ON) - 20 - m
(VGS =2.5V, ID =3.5A) - 25 - m
(VGS =4.5 V, ID =6A) - 22 - m
(VGS =2.5V, ID =5A) - 27 - m
(VGS =1.8V, ID =1A) - 32 - m
Forward Transconductance (VDS =5V,ID =4.5A) gFS - 16 - S
Dynamic Characteristics (Note4)
Input Capacitance Ciss - 220 - PF
Output Capacitance Coss - 900 - PF
Reverse Transfer Capacitance Crss - 10 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 19 - nS
Turn-on Rise Time tr - 12 - nS
Turn-Off Delay Time td(off) - 60 - nS
Turn-Off Fall Time tf - 15 - nS
Total Gate Charge Qg - 30 - nC
Gate-Source Charge Qgs - 6.3 - nC
Gate-Drain Charge Qgd - 1.9 - nC
Gate Resistance Rg - - 1.0
Drain-Source Diode Characteristics
Diode Forward Current (Note2) IS - 1.0 - A
Diode Forward Voltage (Note2) VSD - 0.75 1.5 V
OUTLINE AND DIMENSIONS (SOT26)
DIM MIN NOR MAX
A 0.90 1.00 1.10
A1 0.01 0.06 0.10
b 0.30 0.40 0.50
c 0.10 0.17 0.20
D 2.80 2.90 3.00
E 1.50 1.60 1.70
e 0.85 0.95 1.05
e1 1.80 1.90 2.00
L 0.20 0.40 0.60
L1 - - -
X 0.70 - -
Y 0.60 REF -
0 - 10
HE 2.60 2.80 -
APPLICATIONS
Battery protection
Load switch
Power management

2201121730_LRC-LDN2367T1G_C2936676.pdf

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