Surface Mount Power MOSFET LRC LDN2367T1G Lead Free Device for Load Switching and Power Management
Product Overview
The LDN2367T1G and S-LDN2367T1G are N-Channel Enhancement Mode Power MOSFETs designed for applications requiring high power and current handling capability. These devices are RoHS compliant and Halogen Free, with the S- prefix variant qualified for automotive and other demanding applications (AEC-Q101 qualified and PPAP capable). They are suitable for battery protection, load switching, and power management functionalities, offering lead-free and surface-mount package options.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Product Type: Lead free product
- Package Type: Surface mount package (SOT26/TSOP-6)
- Variant: S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
Technical Specifications
| Device Marking and Ordering Information | |||
|---|---|---|---|
| Device | Marking | Shipping | Units |
| LDN2367T1G | LDN2367T1G | 3000/Tape&Reel | |
| S-LDN2367T1G | S-LDN2367T1G | 3000/Tape&Reel | |
| LDN2367T3G | LDN2367T3G | 10000/Tape&Reel | |
| Absolute Maximum Ratings (TA =25 unless otherwise noted) | |||
|---|---|---|---|
| Parameter | Symbol | Limits | Unit |
| DrainSource Voltage | VDS | 20 | V |
| GateSource Voltage | VGS | 12 | V |
| Drain Current-Continuous | ID | 6.3 | A |
| Drain Current-Pulsed (Note1) | IDM | 25 | A |
| Maximum Power Dissipation | PD | 1.5 | W |
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 ~ +150 | |
| Thermal Characteristics (Note 2) | |||
|---|---|---|---|
| Parameter | Symbol | Limits | Unit |
| Thermal Resistance, Junction-to-Ambient | RJA | 83 | /W |
| Electrical Characteristics (Ta= 25C) | |||||
|---|---|---|---|---|---|
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (VGS =0V ID =250A) | BVDSS | 20 | - | - | V |
| Zero Gate Voltage Drain Current (VDS =20V,VGS =0V) | IDSS | - | 1 | 10 | A |
| Gate-Body Leakage Current (VGS =12V,VDS =0V) | IGSS | - | - | 100 | nA |
| On Characteristics (Note 3) | |||||
| Gate Threshold Voltage (VDS =V GS ,ID =250A) | VGS(th) | 0.5 | 0.7 | 1.2 | V |
| Drain-Source On-State Resistance (VGS =4.5V, ID =4.5A) | RDS(ON) | - | 20 | - | m |
| (VGS =2.5V, ID =3.5A) | - | 25 | - | m | |
| (VGS =4.5 V, ID =6A) | - | 22 | - | m | |
| (VGS =2.5V, ID =5A) | - | 27 | - | m | |
| (VGS =1.8V, ID =1A) | - | 32 | - | m | |
| Forward Transconductance (VDS =5V,ID =4.5A) | gFS | - | 16 | - | S |
| Dynamic Characteristics (Note4) | |||||
| Input Capacitance | Ciss | - | 220 | - | PF |
| Output Capacitance | Coss | - | 900 | - | PF |
| Reverse Transfer Capacitance | Crss | - | 10 | - | PF |
| Switching Characteristics (Note 4) | |||||
| Turn-on Delay Time | td(on) | - | 19 | - | nS |
| Turn-on Rise Time | tr | - | 12 | - | nS |
| Turn-Off Delay Time | td(off) | - | 60 | - | nS |
| Turn-Off Fall Time | tf | - | 15 | - | nS |
| Total Gate Charge | Qg | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | 6.3 | - | nC |
| Gate-Drain Charge | Qgd | - | 1.9 | - | nC |
| Gate Resistance | Rg | - | - | 1.0 | |
| Drain-Source Diode Characteristics | |||||
| Diode Forward Current (Note2) | IS | - | 1.0 | - | A |
| Diode Forward Voltage (Note2) | VSD | - | 0.75 | 1.5 | V |
| OUTLINE AND DIMENSIONS (SOT26) | |||
|---|---|---|---|
| DIM | MIN | NOR | MAX |
| A | 0.90 | 1.00 | 1.10 |
| A1 | 0.01 | 0.06 | 0.10 |
| b | 0.30 | 0.40 | 0.50 |
| c | 0.10 | 0.17 | 0.20 |
| D | 2.80 | 2.90 | 3.00 |
| E | 1.50 | 1.60 | 1.70 |
| e | 0.85 | 0.95 | 1.05 |
| e1 | 1.80 | 1.90 | 2.00 |
| L | 0.20 | 0.40 | 0.60 |
| L1 | - | - | - |
| X | 0.70 | - | - |
| Y | 0.60 | REF | - |
| 0 | - | 10 | |
| HE | 2.60 | 2.80 | - |
| APPLICATIONS | ||
|---|---|---|
| Battery protection | ||
| Load switch | ||
| Power management | ||
2201121730_LRC-LDN2367T1G_C2936676.pdf
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