Single Thyristor Littelfuse IXYS CS19-08HO1 with High Surge Current and Forward Voltage Drop Ratings
Key Attributes
Model Number:
CS19-08HO1
Product Custom Attributes
Holding Current (Ih):
50mA
Current - Gate Trigger(Igt):
28mA
Voltage - On State(Vtm):
1.6V
Current - On State(It(RMS)):
29A
Peak Off - State Voltage(Vdrm):
800V
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
CS19-08HO1
Package:
TO-220
Product Description
Product Overview
The CS19-08ho1 is a single thyristor designed for line frequency applications. It features a planar passivated chip for long-term stability and is suitable for various power control and conversion tasks. This thyristor offers high efficiency and is compliant with RoHS standards.
Product Attributes
- Brand: IXYS
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Package: TO-220
Technical Specifications
| Symbol | Definition | Conditions | min. | typ. | max. | Unit |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse/forward blocking voltage | TVJ = 150C; f = 50 Hz | 800 | V | ||
| IT(AV) | RMS forward current | TAV = 180 sine | 20 | A | ||
| ITSM | max. forward surge current | t = 10 ms; (50 Hz), sine | 155 | A | ||
| It | value for fusing | t = 10 ms; (50 Hz), sine | 120 | As | ||
| VT | forward voltage drop | IT = 20 A; TVJ = 25C | 1.31 | 1.65 | V | |
| RT | slope resistance for power loss calculation only | IT = 20 A; TVJ = 125C | 22 | m | ||
| Ptot | total power dissipation | TC = 25C | 170 | W | ||
| RthJC | thermal resistance junction to case | 0.7 | K/W | |||
| VGT | gate trigger voltage | IGT = 0.15 A; VD = 6 V; TVJ = 25C | 1.5 | V | ||
| IGT | gate trigger current | VD = 6 V; TVJ = 25C | 28 | mA | ||
| IL | latching current | TVJ = 150C | 75 | mA | ||
| tq | turn-off time | IT = 20 A; VD = 100 V; (dv/dt) = 20 V/s | 150 | s | ||
| (dv/dt)cr | critical rate of rise of voltage | TVJ = 150C; method 1 (linear voltage rise) | 500 | V/s | ||
| (di/dt)cr | critical rate of rise of current | TVJ = 150C; f = 50 Hz | 150 | A/s | ||
| TVJ | virtual junction temperature | -40 | 125 | C | ||
| Tstg | storage temperature | -40 | 150 | C |
2410121714_Littelfuse-IXYS-CS19-08HO1_C5447837.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
