PNP Silicon Transistor LRC L9012RLT1G Featuring SOT23 Package for Various Electronic Applications
Key Attributes
Model Number:
L9012RLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
150nA
Pd - Power Dissipation:
225mW
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L9012RLT1G
Package:
SOT-23
Product Description
Product Overview
PNP Silicon General Purpose Transistors designed for various electronic applications. These transistors offer reliable performance with key electrical and thermal characteristics suitable for a wide range of circuit designs.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: RoHS
- Package: SOT-23 (TO-236AB)
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix series)
Technical Specifications
| Device Marking | Order Number | Hfe Range | Shipping Quantity | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Total Device Dissipation (PD) @ 25C (FR-5 Board) | Junction to Ambient Thermal Resistance (JA) @ 25C (FR-5 Board) |
| 12P | L9012PLT1G | 100~200 | 3000/Tape&Reel | -20 V | -500 mAdc | 225 mW | 556 C/W |
| 12P | L9012PLT3G | 100~200 | 10000/Tape&Reel | -20 V | -500 mAdc | 225 mW | 556 C/W |
| 12Q | L9012QLT1G | 150~300 | 3000/Tape&Reel | -20 V | -500 mAdc | 225 mW | 556 C/W |
| 12Q | L9012QLT3G | 150~300 | 10000/Tape&Reel | -20 V | -500 mAdc | 225 mW | 556 C/W |
| 12R | L9012RLT1G | 200~400 | 3000/Tape&Reel | -20 V | -500 mAdc | 225 mW | 556 C/W |
| 12R | L9012RLT3G | 200~400 | 10000/Tape&Reel | -20 V | -500 mAdc | 225 mW | 556 C/W |
| 12S | L9012SLT1G | 300~600 | 3000/Tape&Reel | -20 V | -500 mAdc | 225 mW | 556 C/W |
| 12S | L9012SLT3G | 300~600 | 10000/Tape&Reel | -20 V | -500 mAdc | 225 mW | 556 C/W |
1810010214_LRC-L9012RLT1G_C78556.pdf
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