Automotive PNP silicon transistor LRC LBTP660Z4TZHG with 6 amp continuous current rating and RoHS compliance
Key Attributes
Model Number:
LBTP660Z4TZHG
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
833mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
6A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBTP660Z4TZHG
Package:
SOT-223
Product Description
Product Overview
The LBTP660Z4TZHG and S-LBTP660Z4TZHG are general-purpose PNP silicon transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors offer compliance with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: PNP Silicon
- Certifications: RoHS compliant, Halogen Free, AEC-Q101 qualified (S-prefix)
- Packaging: SOT223, 1000/Tape&Reel
Technical Specifications
| Parameter | Symbol | LBTP660Z4TZHG / S-LBTP660Z4TZHG | Unit |
| CollectorEmitter Voltage | VCEO | -60 | V |
| CollectorBase Voltage | VCBO | -100 | V |
| EmitterBase Voltage | VEBO | -6 | V |
| Collector Current Continuous | IC | -6 | A |
| Peak collector current | ICM | -12 | A |
| Junction and Storage temperature | TJ,Tstg | 55+150 | C |
| Total Device Dissipation, FR4 Board (@ TA = 25C) | PD | 833 | mW |
| Thermal Resistance, JunctiontoAmbient (@ TA = 25C) | RJA | 150 | C/W |
| CollectorEmitter Breakdown Voltage (IC=-10mA,IB=0) | VBR(CEO) | -60 | V |
| CollectorBase Breakdown Voltage (IC=-100A,IE=0) | VBR(CBO) | -100 | V |
| EmitterBase Breakdown Voltage (IE=-100A,IC=0) | VBR(EBO) | -6 | V |
| Collector-Base cut-off current (VCB = -100 V, IE = 0) | ICBO | -10 | A |
| Emitter-Base cut-off current (VEB =-6V, IC =0) | IEBO | -100 | nA |
| Collector-Emitter cutoff Current (IB=0, VCE = -60V) | ICEO | -100 | nA |
| DC Current Gain (VCE = -2 V,IC = -500mA) | HFE | 150 | - |
| DC Current Gain (VCE = -2 V,IC = -1A) | HFE | 100 | - |
| DC Current Gain (VCE = -2 V,IC = -2A) | HFE | 70 | - |
| DC Current Gain (VCE = -2 V,IC = -6A) | HFE | 50 | - |
| CollectorEmitter Saturation Voltage (IC=-100mA,IB=-2mA) | VCE(sat) | -0.25 | V |
| CollectorEmitter Saturation Voltage (IC=-1A,IB=-100mA) | VCE(sat) | -0.35 | V |
| CollectorEmitter Saturation Voltage (IC=-6A,IB=-600mA) | VCE(sat) | -1.2 | V |
| Base-Emitter saturation voltage (IC=-1A, IB=-100mA) | VBE(sat) | -1.2 | V |
| Transition Frequency (VCE = -10 V, IC = -500 mA,f = 1 MHz) | fT | 360 | MHz |
| Input Capacitance (VEB = -5.0 V, f = 1.0 MHz) | Cibo | 360 | pF |
| Output Capacitance (VCB = -10 V, f = 1.0 MHz) | Cobo | 100 | pF |
2212131830_LRC-LBTP660Z4TZHG_C5273339.pdf
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