General Purpose NPN Silicon Transistor LRC LBC817-40WT1G Suitable for Automotive and Control Circuits

Key Attributes
Model Number: LBC817-40WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC817-40WT1G
Package:
SC-70(SOT323)
Product Description

Product Overview

The LBC817-40WT1G and S-LBC817-40WT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variants are AEC-Q101 qualified and PPAP capable. These transistors are RoHS compliant and Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified (S- prefix variants), PPAP capable (S- prefix variants)
  • Device Marking: YM
  • Package Type: SC70(SOT-323)

Technical Specifications

ParameterSymbolLBC817-40WT1GS-LBC817-40WT1GUnitLimits
Maximum RatingsVCEO4545V
VCBO5050V
VEBO55V
Thermal CharacteristicsPD (FR-5 Board)200mW(Ta = 25C)
PD (Alumina Substrate)150mW(Ta = 25C)
TJ,Tstg-55~+150C
Electrical Characteristics (Ta= 25C)V(BR)CEO45V(IC = 10 mA)
V(BR)CES50V(IC = 10 A, VEB = 0)
V(BR)EBO5V(IE = 1.0 A)
ICBO10nA(VCB = 20 V)
hFE250(IC = 100 mA, VCE = 1.0 V)
VCE(sat)1.2V(IC = 500 mA, IB = 50 mA)
VBE(on)0.7V(IC = 500 mA, VCE = 1.0 V)
Small-Signal CharacteristicsfT100MHz(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Cobo10pF(VCB = 10 V, f = 1.0 MHz)
Ordering InformationDevice MarkingYMYM
ShippingLBC817-40WT1G3000/Tape&ReelUnit
ShippingLBC817-40WT3G10000/Tape&ReelUnit

1912111437_LRC-LBC817-40WT1G_C383187.pdf

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