Littelfuse IXYS DSEP30-06A diode featuring low Irm values and soft recovery for power supply operation

Key Attributes
Model Number: DSEP30-06A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
250A
Reverse Leakage Current (Ir):
250uA@600V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
165W
Voltage - Forward(Vf@If):
1.91V@60A
Current - Rectified:
30A
Mfr. Part #:
DSEP30-06A
Package:
TO-247-2
Product Description

Product Overview

The DSEP30-06A is a high-performance fast recovery diode from IXYS, featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery time, and improved thermal behavior. Its low Irm-values and very soft recovery behavior contribute to reduced power dissipation and turn-on losses in commutating switches. This diode is suitable for use as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and freewheeling diode in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS). The TO-247 package is industry-standard and RoHS compliant.

Product Attributes

  • Brand: IXYS
  • Part Number: DSEP30-06A
  • Package: TO-247
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Backside: Cathode

Technical Specifications

Symbol Definition Conditions Unit typ. max. min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 600
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 600
IF(AV) average forward current TC = 100C A 30
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 250
Ptot total power dissipation TC = 25C W 165
VF forward voltage drop IF = 30 A; TVJ = 25C V 1.60 1.91
VF0 threshold voltage IF = 60 A; TVJ = 25C V 1.25
rF slope resistance for power loss calculation only IF = 60 A; TVJ = 25C m 8.7
IR reverse current, drain current VR = 600 V; TVJ = 25C A 150
IR reverse current, drain current VR = 600 V; TVJ = 150C mA 1
CJ junction capacitance VR = 400 V; f = 1 MHz pF 26
RthJC thermal resistance junction to case K/W 0.91
RthCH thermal resistance case to heatsink K/W 0.25
TVJ virtual junction temperature C 175 -55
Tstg storage temperature C 150 -55
IRMS RMS current per terminal A 70
V0 threshold voltage V 0.91
R0 slope resistance m 6.1

Dimensions (TO-247):

Sym. Inches Millimeter min. max. min. max.
A 0.185 - 0.209 4.70 - 5.30
A1 0.087 - 0.102 2.21 - 2.59
A2 0.059 - 0.098 1.50 - 2.49
D 0.819 - 0.845 20.79 - 21.45
E 0.610 - 0.640 15.48 - 16.24
E2 0.170 - 0.216 4.31 - 5.48
e 0.430 BSC 10.92 BSC
L 0.780 - 0.800 19.80 - 20.30
L1 - 0.177 - 4.49
P 0.140 - 0.144 3.55 - 3.65
Q 0.212 - 0.244 5.38 - 6.19
S 0.242 BSC 6.14 BSC
b 0.039 - 0.055 0.99 - 1.40
b2 0.065 - 0.094 1.65 - 2.39
b4 0.102 - 0.135 2.59 - 3.43
c 0.015 - 0.035 0.38 - 0.89
D1 0.515 - 13.07 -
D2 0.020 - 0.053 0.51 - 1.35
E1 0.530 - 13.45 -
P1 - 0.29 - 7.39

2410121933_Littelfuse-IXYS-DSEP30-06A_C426668.pdf

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