NPN Silicon Transistor LRC LH8050QLT1G with SOT23 Package and Automotive Grade AECQ101 Certification
Key Attributes
Model Number:
LH8050QLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
-
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LH8050QLT1G
Package:
SOT-23
Product Description
LESHAN RADIO COMPANY, LTD. General Purpose Transistors
This NPN Silicon Epitaxial Planar Transistor offers high current capacity in a compact SOT-23 package, with a continuous collector current of up to 1500 mAdc. It is suitable for general-purpose applications and features an NPN complement, the LH8050. A Pb-Free package option is available, and the 'S-' prefix denotes suitability for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, being AEC-Q101 Qualified and PPAP Capable.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: NPN Silicon
- Package Type: SOT-23
- Certifications: AEC-Q101 Qualified (for 'S-' prefix devices)
- Pb-Free Option: Available
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| Collector-Emitter Voltage | VCEO | 50 | V | |||
| Collector-Base Voltage | VCBO | 50 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current-continuous | IC | 1500 | mAdc | |||
| Total Dissipation Power | D | 225 | mW | |||
| Junction and Storage Temperature | Tj, Tstg | -55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | V | (IC=2.0mA,IE=0) | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | (IE=100A,IC=0) | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | V | (IC=100A,IE=0) | ||
| Collector Cutoff Current | ICBO | 100 | nA | (VCB=35V,IE=0) | ||
| Emitter Cutoff Current | IEBO | 100 | nA | (VEB=6V,IC=0) | ||
| DC Current Gain | hFE | 100 | 320 | (IC=100mA,VCE=1V) | ||
| DC Current Gain | hFE | 40 | (IC=800mA,VCE=1V) | |||
| Collector-Emitter Saturation Voltage | VCE(S) | 0.5 | V | (IC=800mA, IB=80mA) | ||
| Base-Emitter Voltage | VBE | 0.66 | 1 | V | (VCE=1V,IC=10mA) | |
1810291812_LRC-LH8050QLT1G_C132810.pdf
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